Datasheet

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Figure 42. Compensation for Input Capacitance
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 – FEBRUARY 1997
26
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
input characteristics (continued)
It is good practice to include guard rings around inputs (similar to those of Figure 37 in the Parameter
Measurement Information section). These guards should be driven from a low-impedance source at the same
voltage level as the common-mode input (see Figure 41).
The inputs of any unused amplifiers should be tied to ground to avoid possible oscillation.
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V
O
V
I
V
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V
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(a) NONINVERTING AMPLIFIER (b) INVERTING AMPLIFIER (c) UNITY-GAIN AMPLIFIER
Figure 41. Guard-Ring Schemes
noise performance
The noise specifications in operational amplifiers circuits are greatly dependent on the current in the first-stage
differential amplifier. The low input bias-current requirements of the TLV233x results in a very low noise current,
which is insignificant in most applications. This feature makes the device especially favorable over bipolar
devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices exhibit greater noise
currents.
feedback
Operational amplifiers circuits nearly always
employ feedback, and since feedback is the first
prerequisite for oscillation, caution is appropriate.
Most oscillation problems result from driving
capacitive loads and ignoring stray input
capacitance. A small-value capacitor connected
in parallel with the feedback resistor is an effective
remedy (see Figure 42). The value of this
capacitor is optimized empirically.
electrostatic-discharge protection
The TLV233x incorporates an internal electrostatic-discharge (ESD)-protection circuit that prevents functional
failures at voltages up to 2000 V as tested under MIL-PRF-38535. Method 3015.2. Care should be exercised,
however, when handling these devices as exposure to ESD may result in the degradation of the device
parametric performance. The protection circuit also causes the input bias currents to be temperature dependent
and have the characteristics of a reverse-biased diode.