Datasheet

TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158D JUNE 1996 REVISED APRIL 2001
26
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
APPLICATION INFORMATION
macromodel information
Macromodel information provided was derived using Microsim Parts, the model generation software used
with Microsim PSpice. The Boyle macromodel (see Note 6) and subcircuit in Figure 57 are generated using
the TLV2231 typical electrical and operating characteristics at T
A
= 25°C. Using this information, output
simulations of the following key parameters can be generated to a tolerance of 20% (in most cases):
Maximum positive output voltage swing
Maximum negative output voltage swing
Slew rate
Quiescent power dissipation
Input bias current
Open-loop voltage amplification
Unity-gain frequency
Common-mode rejection ratio
Phase margin
DC output resistance
AC output resistance
Short-circuit output current limit
NOTE 6: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, Macromodeling of Integrated Circuit Operational Amplifiers, IEEE Journal
of Solid-State Circuits, SC-9, 353 (1974).
OUT
+
+
+
+
+
+
+
+
+
.SUBCKT TLV2231 1 2 3 4 5
C1 11 12 13.51E12
C2 6 7 50.00E12
DC 5 53 DX
DE 54 5 DX
DLP 90 91 DX
DLN 92 90 DX
DP 4 3 DX
EGND 99 0 POLY (2) (3,0) (4,0) 0 .5 .5
FB 7 99 POLY (5) VB VC VE VLP
+ VLN 0 90.83E3 10E3 10E3 10E3 10E3
GA 6 0 11 12 314.2E6
GCM 0 6 10 99 242.35E9
ISS 3 10 DC 87.00E6
HLIM 90 0 VLIM 1K
J1 11 2 10 JX
J2 12 1 10 JX
R2 6 9 100.0E3
RD1 60 11 3.183E3
RD2 60 12 3.183E3
R01 8 5 25
R02 7 99 25
RP 3 4 6.553E3
RSS 10 99 2.500E6
VAD 60 4 .5
VB 9 0 DC 0
VC 3 53 DC .795
VE 54 4 DC .795
VLIM 7 8 DC 0
VLP 91 0 DC 12.4
VLN 0 92 DC 17.4
.MODEL DX D (IS=800.0E18)
.MODEL JX PJF (IS=500.0E15 BETA=2.939E3
+ VTO=.065)
.ENDS
V
DD+
RP
IN
2
IN+
1
V
DD
VAD
RD1
11
J1 J2
10
RSS ISS
3
12
RD2
60
VE
54
DE
DP
VC
DC
4
C1
53
R2
6
9
EGND
VB
FB
C2
GCM
GA
VLIM
8
5
RO1
RO2
HLIM
90
DLP
91
DLN
92
VLNVLP
99
7
Figure 57. Boyle Macromodel and Subcircuit
PSpice and Parts are trademark of MicroSim Corporation.
Macromodels, simulation models, or other models provided by TI,
directly or indirectly, are not warranted by TI as fully representing all
of the specification and operating characteristics of the
semiconductor product to which the model relates.