Datasheet

TLK110
www.ti.com SLLS901D –DECEMBER 2011–REVISED JANUARY 2014
9.4 DC CHARACTERISTICS, VDD_IO
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
3.3V VDD_IO
V
IH
Input high voltage Nominal VCC = 3.3V VDD_IO = 3.3V ±10% 2.0 V
V
IL
Input low voltage VDD_IO = 3.3V±10% 0.8 V
V
OL
Output low voltage I
OL
= 4 mA VDD_IO = 3.3V±10% 0.4 V
V
OH
Output high voltage I
OH
= –4 mA VDD_IO = 3.3V±10% VDD_IO – 0.5 V
2.5V VDD_IO
V
IH
Input high voltage VDD_IO = 2.5V±10% 1.5 V
V
IL
Input low voltage VDD_IO = 2.5V±10% 0.5 V
V
OL
Output low voltage I
OL
= 2 mA VDD_IO = 2.5V±10% 0.4 V
V
OH
Output high voltage I
OH
= –2 mA VDD_IO = 2.5V±10% VDD_IO – 0.4 V
1.8V VDD_IO
V
IH
Input high voltage VDD_IO = 1.8V±10% 1.3 V
V
IL
Input low voltage VDD_IO = 1.8V±10% 0.45 V
V
OL
Output low voltage I
OL
= 2 mA VDD_IO = 1.8V±10% 0.4 V
V
OH
Output high voltage I
OH
= –2 mA VDD_IO = 1.8V±10% VDD_IO – 0.4 V
9.5 DC CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
IH
Input high current V
IN
= V
CC
10 μA
I
IL
Input low current V
IN
= GND 10 μA
I
OZ
3-State leakage V
OUT
= V
CC
, V
OUT
= GND ±10 μA
R
PULLUP
Integrated Pullup Resistance 14.7 23.7 49.7 kΩ
R
PULLDOWN
Integrated Pulldown Resistance 14.5 24.9 48.1 kΩ
V
TPTD_100
100M transmit voltage 0.95 1 1.05 V
V
TPTDsym
100M transmit voltage symmetry ±2%
V
TPTD_10
10M transmit voltage 2.2 2.5 2.8 V
C
IN1
CMOS input capacitance 5 pF
C
OUT1
CMOS output capacitance 5 pF
V
TH1
10Base-T Receive threshold 200 mV
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