Datasheet

TLK105
TLK106
www.ti.com SLLSEB8A –AUGUST 2012–REVISED MARCH 2013
over operating free-air temperature range (unless otherwise noted)
PARAMETER CONDITIONS MIN TYP MAX UNIT
θ
JA
Junction-to-ambient thermal resistance (no airflow) JEDEC high-K model 36.4
θ
JB
Junction-to-board thermal resistance 9.3
°C/W
θ
JC(Top)
Junction-to-case thermal resistance, Top 26.8
θ
JC(Bottom)
Junction-to-case thermal resistance, Bottom 1.7
9.4 DC CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
IH
Input high voltage
(1)
Nominal VCC = VDD33_IO = 3.3V 2.0 V
V
IL
Input low voltage
(1)
0.8 V
I
IH
Input high current V
IN
= V
CC
10 μA
I
IL
Input low current V
IN
= GND 10 μA
V
OL
Output low voltage I
OL
= 4 mA 0.4 V
V
OH
Output high voltage I
OH
= –4 mA V
CC
– 0.5 V
I
OZ
3-State leakage V
OUT
= V
CC
, V
OUT
= GND ±10 μA
R
PULLUP
Integrated Pullup Resistance 14.7 23.7 49.7 kΩ
R
PULLDOWN
Integrated Pulldown Resistance 14.5 24.9 48.1 kΩ
V
TPTD_100
100M transmit voltage 0.95 1 1.05 V
V
TPTDsym
100M transmit voltage symmetry ±2%
V
TPTD_10
10M transmit voltage 2.2 2.5 2.8 V
C
IN1
CMOS input capacitance 5 pF
C
OUT1
CMOS output capacitance 5 pF
V
TH1
10Base-T Receive threshold 200 mV
(1) Nominal V
CC
of VDD33_IO = 3.3V
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