Datasheet
Table Of Contents
- 1 Introduction
- Table of Contents
- 2 Pin Descriptions
- 3 Configuration
- 4 Interfaces
- 5 Architecture
- 6 Reset and Power Down Operation
- 7 Design Guidelines
- 8 Register Block
- 8.1 Register Definition
- 8.1.1 Basic Mode Control Register (BMCR)
- 8.1.2 Basic Mode Status Register (BMSR)
- 8.1.3 PHY Identifier Register #1 (PHYIDR1)
- 8.1.4 PHY Identifier Register #2 (PHYIDR2)
- 8.1.5 Auto-Negotiation Advertisement Register (ANAR)
- 8.1.6 Auto-Negotiation Link Partner Ability Register (ANLPAR) (BASE Page)
- 8.1.7 Auto-Negotiate Expansion Register (ANER)
- 8.1.8 Auto-Negotiate Next Page Transmit Register (ANNPTR)
- 8.1.9 Auto-Negotiation Link Partner Ability Next Page Register (ANLNPTR)
- 8.2 Register Control Register (REGCR)
- 8.3 Address or Data Register (ADDAR)
- 8.4 Extended Registers
- 8.4.1 PHY Control Register (PHYCR)
- 8.4.2 PHY Status Register (PHYSR)
- 8.4.3 MII Interrupt Mask Register (MINTMR)
- 8.4.4 MII Interrupt Status Register (MINTSR)
- 8.4.5 MII Interrupt Control Register (MINTCR)
- 8.4.6 Receiver Error Counter Register (RECR)
- 8.4.7 BIST Control Register (BISCR)
- 8.4.8 BIST STATUS Register (BISSR)
- 8.4.9 BIST Byte Count Register (BISBCR)
- 8.4.10 BIST Error Count Register (BISECR)
- 8.4.11 BIST Packet Length Register (BISPLR)
- 8.4.12 BIST Inter Packet Gap Register (BISIPGR)
- 8.4.13 LED Direct Control Register (LEDCR)
- 8.4.14 Power Down Register (PDR)
- 8.4.15 False Carrier Sense Counter Register (FCSCR)
- 8.4.16 RX Channel Control Register (RXCCR)
- 8.5 Cable Diagnostic Registers
- 8.5.1 Cable Diagnostic Registers (CDCR)
- 8.5.2 Cable Diagnostic Status Register (CDSR)
- 8.5.3 Cable Diagnostic Results Register (CDRR)
- 8.5.4 TDR State Machine Enable (TDRSMR)
- 8.5.5 TDR Pattern Amplitude Register (TDRPAR)
- 8.5.6 TDR Manual Pulse Register (TDRMPR)
- 8.5.7 TDR Channel Silence Register (TDRCSR)
- 8.5.8 TDR Control Register (TDRCR)
- 8.5.9 TDR Clock Cycles Register (TDRLCR)
- 8.5.10 TDR Low Threshold Register (TDRLT1)
- 8.5.11 TDR Low Threshold Register (TDRLT2)
- 8.5.12 TDR Low Threshold Register (TDRLT3)
- 8.5.13 TDR Low Threshold Register (TDRLT4)
- 8.5.14 TDR High Threshold Register (TDRHT1)
- 8.5.15 TDR High Threshold Register (TDRHT2)
- 8.5.16 TDR High Threshold Register (TDRHT3)
- 8.5.17 TDR High Threshold Register (TDRHT4)
- 8.5.18 TDR Pattern Control Register 1 (TDRLCR1)
- 8.5.19 TDR Pattern Control Register 2 (TDRLCR2)
- 8.5.20 DSA Configuration Register 1 (DSACR1)
- 8.5.21 DSA Configuration Register 2 (DSACR2)
- 8.5.22 DSA Start Frequency (DSASFR)
- 8.5.23 DSA Frequency Control (DSAFCR)
- 8.5.24 DSA Output Control (DSAOCR)
- 8.5.25 RAM Control 1 (RAMCR1)
- 8.5.26 RAM Control 2 (RAMCR2)
- 8.5.27 RAM Data Out (RAMDR)
- 8.5.28 CD Pre Test Configuration Control 1 (CDPTC1R)
- 8.5.29 CD Pre Test Configuration Control 2 (CDPTC2R)
- 8.5.30 LPF Bypass (LPFBR)
- 8.1 Register Definition
- 9 Electrical Specifications
- 10 Appendix A: Digital Spectrum Analyzer (DSA) Output
- Revision History
S0340-01
XI XO
R
1
C
L2
C
L1
TLK100
www.ti.com
SLLS931B–AUGUST 2009–REVISED DECEMBER 2009
7.2.2 Crystal
The use of a 25MHz, parallel, 20pF-load crystal resonator is recommended if a crystal source is desired.
Figure 7-2 shows a typical connection for a crystal resonator circuit. The load capacitor values will vary
with the crystal vendors; check with the vendor for the recommended loads.
The oscillator circuit is designed to drive a parallel resonance AT-cut crystal with a minimum drive level of
100μW and a maximum of 500μW. If a crystal is specified for a lower drive level, a current limiting resistor
should be placed in series between XO and the crystal.
As a starting point for evaluating an oscillator circuit, if the requirements for the crystal are not known, set
the values for C
L1
and C
L2
at 33pF, and R
1
should be set at 0Ω.
Specification for 25MHz crystal are listed in Table 7-2.
Figure 7-2. Crystal Oscillator Circuit
Table 7-1. 25 MHz Oscillator Specification
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Frequency 25 MHz
Frequency Tolerance Operational Temperature ±50 ppm
Frequency Stability 1 year aging ±50 ppm
Rise / Fall Time 10%–90% 8 nsec
Jitter (Short term) Cycle-to-cycle 50 psec
Jitter (Long term) Accumulative over 10 ms 1 nsec
Symmetry Duty Cycle 40% 60%
Load Capacitance 15 30 pF
Table 7-2. 25 MHz Crystal Specification
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Frequency 25 MHz
Frequency Tolerance Operational Temperature ±50 ppm
At 25°C ±50 ppm
Frequency Stability 1 year aging ±5 ppm
Load Capacitance 10 40 pF
Copyright © 2009, Texas Instruments Incorporated Design Guidelines 37
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