Datasheet

 
  
  
SLOS098D − AUGUST 1991 − REVISED MAY 1998
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
description (continued)
The C-suffix devices are characterized for operation from 0°C to 70°C. The I suffix devices are characterized
for operation from −40°C to 85°C. The M suffix devices are characterized over the full military temperature range
of −55°C to 125°C.
OUT
IN
COMMON
1
2
3
4
8
7
6
5
OUT
COMMON
IN
NC
NOISE REDUCTION
NC
NC
NC
D, JG, OR P PACKAGE
(TOP VIEW)
NC − No internal connection
LP PACKAGE
(TOP VIEW)
TLE2426Y chip information
This chip, properly assembled, displays characteristics similar to the TLE2426C. Thermal compression or
ultrasonic bonding may be used on the doped aluminum bonding pads. The chips may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS:
15 MILS TYPICAL
BONDING PADS:
4 × 4 MILS MINIMUM
T
J
max = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN
MILS.
60
88
OUT
(1)
(2)
(8)
(3)
NOISE
REDUCTION
IN
COMMON
+1
NOTE A: Both bonding pads numbered 1, both numbered 2,
and both numbered 3, must be bonded out to the
corresponding functions pin.
(3)
(3)
(2) (2)
(1)
(1)
(8)