Datasheet
TLC272, TLC272A, TLC272B, TLC272Y, TLC277
LinCMOS
PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
T
A
V
IO
max
AT 25°C
SMALL
OUTLINE
(D)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(P)
TSSOP
(PW)
CHIP
FORM
(Y)
500 µV TLC277CD — — TLC277CP — —
0
°
Cto70
°
c
500
µV
2 mV
TLC277CD
TLC272BCD — —
TLC277CP
TLC272BCP — —
0°C
t
o
70°
c
5 mV TLC272ACD — — TLC272ACP — —
10mV TLC272CD — — TLC272CP TLC272CPW TLC272Y
500
µ
V TLC277ID — — TLC277IP — —
40
°
Cto85
°
C
500
µV
2 mV
TLC277ID
TLC272BID — —
TLC277IP
TLC272BIP — —
–
40°C
t
o
85°C
5 mV TLC272AID — — TLC272AIP — —
10 mV TLC272ID — — TLC272IP — —
55
°
Cto125
°
C
500 µV TLC277MD TLC277MFK TLC277MJG TLC277MP — —
–
55°C
t
o
125°C
µ
10 mV TLC272MD TLC272MFK TLC272MJG TLC272MP — —
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC277CDR).
description (continued)
In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and
TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote
and inaccessible battery-powered applications. The common-mode input voltage range includes the negative
rail.
A wide range of packaging options is available, including small-outline and chip carrier versions for high-density
system applications.
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.
The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages
up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling
these devices as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of –55°C to 125°C.