Datasheet

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   
 
SLOS175B − FEBRUARY 1997 − REVISED JANUARY 2008
42
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
Figure 1. Noise-Voltage Test Circuit
2 kΩ
V
DD +
V
DD−
/GND
V
O
20 Ω 20 Ω
−
+
Figure 2. Phase-Margin Test Circuit
10 kΩ
V
DD +
V
DD −
V
O
100 Ω
−
+
V
I
C
L
R
L
(see Note A)
NOTE A: C
L
includes fixture capacitance.
Figure 3. Slew-Rate Test Circuit
V
DD+
V
DD−
V
O
−
+
C
L
R
L
(see Note A)
V
I
NOTE A: C
L
includes fixture capacitance.
Figure 4. Input-Bias and Offset-Current Test Circuit
V
DD+
V
DD−
/GND
V
O
−
+
Ground Shield
pA pA
typical values
Typical values presented in this data sheet represent the median (50% point) of device parametric performance.
input bias and offset current
At the picoamp bias current level of the TLC220x, TLC220xA, and TLC220xB, accurate measurement of the
bias current becomes difficult. Not only does this measurement require a picoammeter, but test socket leakages
can easily exceed the actual device bias currents. To measure these small currents, Texas Instruments uses
a two-step process. The socket leakage is measured using picoammeters with bias voltages applied but with
no device in the socket. The device is then inserted in the socket, and a second test measuring both the socket
leakage and the device input bias current is performed. The two measurements are then subtracted
algebraically to determine the bias current of the device.
noise
Texas Instruments offers automated production noise testing to meet individual application requirements. Noise
voltage at f = 10 Hz and f = 1 kHz is 100% tested on every TLC2201B device, while lot sample testing is
performed on the TLC220xA. For other noise requirements, please contact the factory.