Datasheet

TLC1078, TLC1078Y, TLC1079, TLC1079Y
LinCMOS µPOWER PRECISION
OPERATIONAL AMPLIFIERS
SLOS179A – FEBRUARY 1997 – REVISED MARCH 2001
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
description (continued)
The TLC107x incorporates internal ESD-protection circuits that will prevent functional failures at voltages up
to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised when handling
these devices as exposure to ESD may result in degradation of the device parametric performance. The
TLC107x design also inhibits latch-up of the device inputs and outputs even with surge currents as large
100 mA.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of –55°C to 125°C. The wide range of packaging options includes small-outline and
chip-carrier versions for high-density system applications.
AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
T
A
SMALL OUTLINE
†
CHIP CARRIER CERAMIC DIP CERAMIC DIP PLASTIC DIP PLASTIC DIP
FORM
‡
(Y)
(D)
(FK) (J) (JG) (N) (P)
(Y)
0°C to 70°C
TLC1078CD
TLC1079CD
— — — TLC1079CN TLC1078CP
TLC1078Y
TLC1079Y
–40°C to 85°C
TLC1078ID
TLC1079ID
— — — TLC1079IN TLC1078IP —
–55°C to 125°C
TLC1078MD
TLC1079MD
TLC1078MFK
TLC1079MFK
TLC1079MJ TLC1078MJG TLC1079MN TLC1078MP —
†
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC1078CDR).
‡
Chip forms are tested 25°C only.
symbol (each amplifier)
OUT
–
+
IN–
IN+