Datasheet
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ELECTRICAL CHARACTERISTICS
(1)
OPERATING CHARACTERISTICS
TL082-Q1
JFET-INPUT OPERATIONAL AMPLIFIER
SLOS548 – SEPTEMBER 2007
V
CC ±
= ± 15 V (unless otherwise noted)
PARAMETER TEST CONDITIONS T
A
(2)
MIN TYP MAX UNIT
25 ° C 3 6
V
IO
Input offset voltage V
O
= 0, R
S
= 50 Ω mV
Full range 9
Temperature coefficient of input
α
VIO
V
O
= 0, R
S
= 50 Ω Full range 18 μ V/ ° C
offset voltage
25 ° C 5 100 pA
I
IO
Input offset current
(3)
V
O
= 0
Full range 20 nA
25 ° C 30 200 pA
I
IB
Input bias current
(3)
V
O
= 0
Full range 50 nA
Common-mode input – 12
V
ICR
25 ° C ± 11 V
voltage range to 15
R
L
= 10 k Ω 25 ° C ± 12 ± 13.5
Maximum peak output
V
OM
R
L
≥ 10 k Ω ± 12 V
voltage swing
Full range
R
L
≥ 2 k Ω ± 10 ± 12
25 ° C 50 200
Large-signal differential voltage
A
VD
V
O
= ± 10 V, R
L
≥ 2 k Ω V/mV
amplification
Full range 15
B1 Unity-gain bandwidth 25 ° C 3 MHz
r
i
Input resistance 25 ° C 10
12
Ω
CMRR Common-mode rejection ratio V
IC
= V
ICR
(min), V
O
= 0, R
S
= 50 Ω 25 ° C 75 86 dB
Supply-voltage rejection ratio V
CC
= ± 15 V to ± 9 V,
k
SVR
25 ° C 80 86 dB
( Δ V
CC ±
/ Δ V
IO
) V
O
= 0, R
S
= 50 Ω
I
CC
Supply current (per amplifier) V
O
= 0, No load 25 ° C 1.4 2.8 mA
V
O1
/V
O2
Crosstalk attenuation A
VD
= 100 25 ° C 120 dB
(1) All characteristics are measured under open-loop conditions with zero common-mode voltage, unless otherwise specified.
(2) Full range for T
A
is – 40 ° C to 85 ° C for I-suffix devices and – 40 ° C to 125 ° C for Q-suffix devices.
(3) Input bias currents of an FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive, as
shown in Figure 14 . Pulse techniques must be used that maintain the junction temperature as close to the ambient temperature as
possible.
V
CC ±
= ± 15 V, T
A
= 25 ° C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SR Slew rate at unity gain V
I
= 10 V, R
L
= 2 k Ω , C
L
= 100 pF, See Figure 1 8 13 V/ μ s
t
r
Rise time V
I
= 20 mV, R
L
= 2 k Ω , C
L
= 100 pF, See Figure 1 0.05 μ s
Overshoot factor V
I
= 20 mV, R
L
= 2 k Ω , C
L
= 100 pF, See Figure 1 20 %
f = 1 kHz 18 nV/ √ Hz
V
n
Equivalent input noise voltage R
S
= 20 Ω
f = 10 Hz to 10 kHz 4 μ V
I
n
Equivalent input noise current R
S
= 20 Ω , f = 1 kHz 0.01 pA/ √ Hz
THD Total harmonic distortion V
Irms
= 6 V, f = 1 kHz, AVD = 1, R
S
≤ 1 k Ω , R
L
≥ 2 k Ω 0.003 %
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