Datasheet
TL05x, TL05xA
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003
48
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
macromodel information
Macromodel information provided was derived using Microsim Parts, the model-generation software used
with Microsim PSpice. The Boyle macromodel (see Note 6 and subcircuit Figure 92) are generated using the
TL05x typical electrical and operating characteristics at T
A
= 25°C. Using this information, output simulations
of the following key parameters can be generated to a tolerance of 20% (in most cases):
Maximum positive output voltage swing
Maximum negative output voltage swing
Slew rate
Quiescent power dissipation
Input bias current
Open-loop voltage amplification
Unity-gain frequency
Common-mode rejection ratio
Phase margin
DC output resistance
AC output resistance
Short-circuit output current limit
NOTE 6: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers”, IEEE Journal
of Solid-State Circuits, SC-9, 353 (1974).
OUT
+
–
+
–
+
–
+
–
+
–
+
–
+
–
+
–
+–
.SUBCKT TL05x 1 2 3 4 5
C1 11 12 3.988E–12
C2 6 7 15.00E–12
DC 5 53 DX
DE 54 5 DX
DLP 90 91 DX
DLN 92 90 DX
DP43DX
EGND99 0 POLY (2) (3,0) (4,0) 0 .5 .5
FB 7 99 POLY (5) VB VC VE VLP
+ VLN 0 2.875E6 –3E6 3E6 3E6 –3E6
GA 6 0 11 12 292.2E–6
GCM 0 6 10 99 6.542E–9
ISS 3 10 DC 300.0E–6
HLIM 90 0 VLIM 1K
J1 11 2 10 JX
J2 12 1 10 JX
R2 6 9 100.0E3
RD1 4 11 3.422E3
RD2 4 12 3.422E3
R01 8 5 125
R02 7 99 125
RP 3 4 11.11E3
RSS 10 99 666.7E6
VB 9 0 DC 0
VC 3 53 DC 3
VE 54 4 DC 3.7
VLIM 7 8 DC 0
VLP 91 0 DC 28
VLN 0 92 DC 28
.MODEL DX D (IS=800.0E–18)
.MODEL JX PJF (IS=15.00E–12 BETA=185.2E–6
+ VTO=–.1)
.ENDS
V
CC+
RP
IN–
2
IN+
3
V
CC–
VAD
RD1
11
J1 J2
10
RSS ISS
3
12
RD2
60
VE
54
DE
DP
VC
DC
4
C1
53
R2
6
9
EGND
VB
FB
C2
GCM
GA
VLIM
8
5
RO1
RO2
HLIM
90
DLP
91
DLN
92
VLNVLP
99
7
Figure 92. Boyle Macromodel and Subcircuit
PSpice and Parts are trademarks of MicroSim Corporation.
Macromodels, simulation models, or other models provided by TI,
directly or indirectly, are not warranted by TI as fully representing all
of the specification and operating characteristics of the
semiconductor product to which the model relates.