Datasheet

TL05x, TL05xA
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003
17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
+
–
V
CC+
V
CC–
V
I
V
O
R
L
NOTE A: C
L
includes fixture capacitance.
C
L
(see Note A)
Figure 1. Slew Rate, Rise/Fall Time,
and Overshoot Test Circuit
Overshoot
10%
90%
t
r
Figure 2. Rise-Time and Overshoot
Waveform
V
CC–
V
CC+
+
–
V
O
R
S
R
S
2 kΩ
Figure 3. Noise-Voltage Test Circuit
Figure 4. Unity-Gain Bandwidth and
Phase-Margin Test Circuit
V
O
V
CC–
V
CC+
+
–
R
L
C
L
(see Note A)
V
I
10 kΩ
100 Ω
NOTE A: C
L
includes fixture capacitance.
typical values
Typical values, as presented in this data sheet
represent the median (50% point) of device
parametric performance.
input bias and offset current
At the picoamp-bias-current level typical of the
TL05x and TL05xA, accurate measurement of the
bias current becomes difficult. Not only does this
measurement require a picoammeter, but
test-socket leakages easily can exceed the actual device bias currents. To accurately measure these small
currents, Texas Instruments uses a two-step process. The socket leakage is measured using picoammeters
with bias voltages applied, but with no device in the socket. The device then is inserted in the socket, and a
second test that measures both the socket leakage and the device input bias current is performed. The two
measurements then are subtracted algebraically to determine the bias current of the device.
noise
Because of the increasing emphasis on low noise levels in many of today’s applications, the input noise voltage
density is sample tested at f = 1 kHz. Texas Instruments also has additional noise-testing capability to meet
specific application requirements. Please contact the factory for details.
Figure 5. Input-Bias and Offset-Current Test Circuit
+
–
V
CC+
V
CC–
Ground Shield
pA pA