Datasheet

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50W

200W

OCM

200W

IN-

IN+

30MHz

Bandpass

Filter

THS770012

OCM

16-Bit ADC

IN-

IN+

(G=12dB)

0 60

Frequency - MHz

-10

-20

-30

-40

-50

-60

-70

-80

-90

-100

-110

-120

-130

dBFS

30 35

5 15 20 5540 45 5010 65

THS770012

www.ti.com

SLOS669C –FEBRUARY 2010–REVISED JANUARY 2012

Broadband, Fully-Differential, 14-/16-Bit ADC Driver Amplifier

Check for Samples: THS770012

FEATURES

DESCRIPTION

The THS770012 is a wideband, fully-differential

• 900MHz Bandwidth at Gain of +10dB

amplifier, with adjustable gain range from +10dB to

• 3300V/µs Slew Rate, V

OUT

= 2V step

+13.7dB (with external components). It is designed

• Adjustable Gain: +10dB to +13.7dB

and optimized specifically for driving 16-bit

analog-to-digital converters (ADCs) at input

• IMD

: –100dBc, V

OUT

= 2V

, R

= 400Ω,

frequencies up to 130MHz, and 14-bit ADCs at input

f = 100MHz

frequencies up to 200MHz. This device provides high

• OIP3: 47dBm, f = 100MHz

bandwidth, high-voltage output with low distortion and

• Noise Figure: 10.7 dB, f = 100MHz

low noise, critical in high-speed data acquisition

systems that require very high dynamic range, such

as wireless base stations and test and measurement

APPLICATIONS

applications. This device also makes an excellent

• 14-/16-Bit ADC Driver

differential amplifier for general-purpose, high-speed

• ADC Driver for Wireless Base Station Signal

differential signal chain and short line driver

Chains: GSM, WCDMA, MC-GSM, LTE

applications.

• ADC Driver for High Dynamic Range Test and

The THS770012 operates on a nominal +5V single

Measurement Equipment

supply, offers very fast, 7.5ns maximum recovery

time from overdrive conditions, and has a

Figure 1. THS770012 Driving 16-Bit ADC

power-down mode for power saving. The THS770012

is offered in a Pb-free (RoHS compliant) and green,

QFN-24 thermally-enhanced package. It is

characterized for operation over the industrial

temperature range of –40°C to +85°C.

RELATED DEVICES

DEVICE DESCRIPTION

Fixed Gain of +6dB, wideband, low-noise,

THS770006

low-distortion, fully-differential amplifier

Wideband, low-noise, low-distortion,

THS4509

Figure 2. FFT Plot with Two-Tone Input at 96MHz

fully-differential amplifier

and 100MHz (see Application Information section)

Wideband, low-noise, low-distortion,

PGA870 fully-differential, digitally-programmable

gain amplifier

ADS5481 to

16-bit, 80MSPS to 200MSPS ADCs

ADS5485

ADS6145 14-bit, 125MSPS ADC

ADS6149 14-bit, 250MSPS ADC

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2PowerPAD is a trademark of Texas Instruments.

3All other trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (35 pages)

PAGE 1
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com Broadband, Fully-Differential, 14-/16-Bit ADC Driver Amplifier Check for Samples: THS770012 FEATURES DESCRIPTION • • • • The THS770012 is a wideband, fully-differential amplifier, with adjustable gain range from +10dB to +13.7dB (with external components).
PAGE 2
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure.
PAGE 3
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com THERMAL INFORMATION THS770012 THERMAL METRIC (1) RGE (24) PINS θJA Junction-to-ambient thermal resistance θJC(top) Junction-to-case(top) thermal resistance θJB Junction-to-board thermal resistance 19 ψJT Junction-to-top characterization parameter 0.5 ψJB Junction-to-board characterization parameter 18.8 θJC(bottom) Junction-to-case(bottom) thermal resistance 8.9 (1) UNITS 44.
PAGE 4
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com ELECTRICAL CHARACTERISTICS (continued) Test conditions are at TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400Ω differential, G = +12dB, differential input and output, and input and output referenced to midsupply, unless otherwise noted. Measured using evaluation module as discussed in Test Circuits section.
PAGE 5
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com ELECTRICAL CHARACTERISTICS (continued) Test conditions are at TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400Ω differential, G = +12dB, differential input and output, and input and output referenced to midsupply, unless otherwise noted. Measured using evaluation module as discussed in Test Circuits section.
PAGE 6
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com PIN CONFIGURATION NC VS+ VS+ VS+ VS+ NC RGE PACKAGE VQFN-24 (TOP VIEW) 24 23 22 21 20 19 200Ω NC 1 60Ω PD 2 VIN- 3 50Ω GS+ 17 Unused 16 VOUT+ 15 VOUT- 14 Unused 13 GS- 2Ω - + VOCM VIN+ 18 140Ω + 4 2Ω - 50Ω VOCM 5 NC 6 60Ω 140Ω 10 GND 11 12 NC 9 GND 8 GND NC 7 GND 200Ω PIN DESCRIPTIONS PIN NAME 1 NC No internal connection 2 PD Power down. High = low power (sleep) mode.
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THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.
PAGE 8
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com TYPICAL CHARACTERISTICS At TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400Ω differential, G = +12dB, differential input and output, input and output pins referenced to midsupply, unless otherwise noted. Measured using EVM as discussed in Test Circuits section.
PAGE 9
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400Ω differential, G = +12dB, differential input and output, input and output pins referenced to midsupply, unless otherwise noted. Measured using EVM as discussed in Test Circuits section.
PAGE 10
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400Ω differential, G = +12dB, differential input and output, input and output pins referenced to midsupply, unless otherwise noted. Measured using EVM as discussed in Test Circuits section.
PAGE 11
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400Ω differential, G = +12dB, differential input and output, input and output pins referenced to midsupply, unless otherwise noted. Measured using EVM as discussed in Test Circuits section. MAXIMUM/MINIMUM SINGLE-ENDED OUTPUT VOLTAGE vs DIFFERENTIAL LOAD RESISTANCE DIFFERENTIAL OUTPUT IMPEDANCE vs FREQUENCY 1000 4.
PAGE 12
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400Ω differential, G = +12dB, differential input and output, input and output pins referenced to midsupply, unless otherwise noted. Measured using EVM as discussed in Test Circuits section.
PAGE 13
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400Ω differential, G = +12dB, differential input and output, input and output pins referenced to midsupply, unless otherwise noted. Measured using EVM as discussed in Test Circuits section. VOCM INPUT BIAS CURRENT vs VOCM INPUT VOLTAGE s-PARAMETERS (MAGNITUDE) 50 20 Gain = 10 dB to 13.
PAGE 14
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com TEST CIRCUITS OVERVIEW The standard THS770012 evaluation module (EVM) is used for testing the typical performance shown in the Typical Characteristics, with changes as noted below. The EVM schematic is shown in Figure 37. The signal generators and analyzers used for most tests have single-ended 50Ω input and output impedance.
PAGE 15
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com + + + + + THS770012 - Figure 37.
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THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com TEST DESCRIPTIONS The following sections describe how the tests were performed, as well as the EVM circuit modifications that were made (if any). Modifications made for test purposes include changing capacitors to resistors, resistors to capacitors, the shorting/opening of components, etc., as noted. Unless otherwise noted, C1, C2, C9, and C13 are all changed to 0.
PAGE 17
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com Power-Down The standard EVM is used with T1 and T2 removed, jumpers placed across terminals 3 to 4 and 1 to 6, R15 and R17 = 49.9Ω, C9 and C13 = 0Ω, and R5, R6, R16, and R21 = open. A waveform generator is connected to the power-down input of the EVM with a 50Ω coaxial cable at J8. The differential output at J3 and J4 is connected with 50Ω coaxial cables to an oscilloscope to measure the outputs.
PAGE 18
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com THEORY OF OPERATION GENERAL DESCRIPTION The THS770012 is a wideband, fully differential amplifier designed and optimized specifically for driving 14-bit and 16-bit ADCs at input frequencies up to 200MHz.
PAGE 19
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com Single-Ended to Differential The THS770012 can be used to amplify and convert single-ended input signals to differential output signals. A basic block diagram of the circuit with nominal gain of +12dB is shown in Figure 39. In order to maintain proper balance in the amplifier and avoid offsets at the output, the alternate input must be biased and the impedance matched to the signal input. For example, if a 50Ω source biased to 2.
PAGE 20
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com Operation with Split Supply ±2.5V The THS770012 can be operated using a split ±2.5V supply. In this case, VS+ is connected to +2.5V, and GND (and any other pin noted to be connected to GND) is connected to -2.5V. As with any device, the THS770012 is impervious to what the user decides to name the levels in the system. In essence, it is simply a level shift of the power pins by –2.5V.
PAGE 21
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com SFDR Considerations Theoretically, the spurious-free dynamic range (SFDR) of the amplifier + filter + ADC adds linearly on a spur-by-spur basis. The amplifier output spurs are linearly related solely to the input signal and the SFDR is usually set by second-order or third-order harmonic distortion for single-tone inputs, and by second-order or third-order intermodulation distortion for two-tone inputs.
PAGE 22
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com For common-mode analysis, assume that VAMP± = VOCM and VADC± = VADC (the specification for the ADC input common-mode voltage). VREF is chosen to be a voltage within the system (such as the ADC or amplifier analog supply) or ground, depending on whether the voltage must be pulled up or down, and RO is chosen to be a reasonable value, such as 49.9Ω.
PAGE 23
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com APPLICATION INFORMATION THS770012 DRIVING 16-BIT ADC To illustrate the performance of the THS770012 as an ADC driver, the device is tested with a 16-bit ADC. For testing purposes, a 30MHz, second-order Butterworth bandpass filter with center frequency at 100MHz is designed. The design target for the source impedance is 40Ω differential, and for load impedance is 400Ω differential.
PAGE 24
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com EVM AND LAYOUT RECOMMENDATIONS Figure 37 is the THS770012RGE EVM schematic, and Figure 43 through Figure 46 show the layout details of the EVM PCB. Table 5 is the bill of materials for the EVM as supplied from TI. It is recommended to follow the layout of the external components as close as possible to the amplifier, ground plane construction, and power routing. General layout guidelines are: 1. Place a 2.
PAGE 25
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com Figure 45. EVM Layout: Layer 2 Figure 46.
PAGE 26
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com Table 5. THS770012RGE EVM Bill of Materials ITEM 26 DESCRIPTION SMD SIZE REFERENCE DESIGNATOR QTY MANUFACTURER PART NUMBER DISTRIBUTOR PART NUMBER 1 CAP, 10.0uF, CERAMIC, X7R, 10V 1206 C4, C5, C6 3 (TDK) C3216X7R1A106K (DIGI-KEY) 445-4043-1-ND 2 CAP, 0.1uF, CERAMIC, X7R, 16V 0603 C7, C8 2 (AVX) 0603YC104KAT2A (DIGI-KEY) 478-1239-1-ND 3 CAP, 0.
PAGE 27
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com Evaluation Board/Kit Important Notice Texas Instruments (TI) provides the enclosed product(s) under the following conditions: This evaluation board/kit is intended for use for ENGINEERING DEVELOPMENT, DEMONSTRATION, OR EVALUATION PURPOSES ONLY and is not considered by TI to be a finished end-product fit for general consumer use.
PAGE 28
THS770012 SLOS669C – FEBRUARY 2010 – REVISED JANUARY 2012 www.ti.com REVISION HISTORY Changes from Revision A (November 2010) to Revision B Page • Changed to Revision B, May 2011 ....................................................................................................................................... 1 • Deleted "using a......have changes" from THS770012 Driving ADS5493 section last part of the first sentence ...............
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PACKAGE OPTION ADDENDUM www.ti.
PAGE 30
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant THS770012IRGER VQFN RGE 24 3000 330.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2 THS770012IRGET VQFN RGE 24 250 180.0 12.4 4.25 4.25 1.15 8.0 12.
PAGE 31
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) THS770012IRGER VQFN RGE 24 3000 367.0 367.0 35.0 THS770012IRGET VQFN RGE 24 250 210.0 185.0 35.
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IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.