Datasheet
ABSOLUTE MAXIMUM RATINGS
(1)
DISSIPATION RATINGS
THS7319
SBOS468A – JUNE 2009 – REVISED JULY 2009 ..............................................................................................................................................................
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION
(1)
PACKAGE TRANSPORT MEDIA,
ECO STATUS
(2)
PRODUCT PACKAGE-LEAD DESIGNATOR QUANTITY
THS7319IZSVT Small Tape and Reel, 250
MicrostarCSP
ZSV Pb-Free, Green
9-Ball
THS7319IZSVR Tape and Reel, 3000
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com .
(2) These packages conform to Lead (Pb)-free and green manufacturing specifications. Additional details including specific material content
can be accessed at www.ti.com/leadfree .
GREEN: TI defines Green to mean Lead (Pb)-Free and in addition, uses less package materials that do not contain halogens, including
bromine (Br), or antimony (Sb) above 0.1% of total product weight. N/A: Not yet available Lead (Pb)-Free; for estimated conversion
dates, go to www.ti.com/leadfree . Pb-FREE: TI defines Lead (Pb)-Free to mean RoHS compatible, including a lead concentration that
does not exceed 0.1% of total product weight, and, if designed to be soldered, suitable for use in specified lead-free soldering
processes.
Over operating free-air temperature range, unless otherwise noted.
THS7319 UNIT
Supply voltage, V
S+
to GND 5.5 V
Input voltage, V
I
– 0.4 to V
S+
V
Output current, I
O
± 75 mA
Continuous power dissipation See Dissipation Ratings Table
Maximum junction temperature, any condition
(2)
, T
J
+150 ° C
Maximum junction temperature, continuous operation, long-term reliability
(3)
, T
J
+125 ° C
Storage temperature range, T
STG
– 65 to +150 ° C
Human body model (HBM) 2000 V
ESD rating: Charge device model (CDM) 1000 V
Machine model (MM) 200 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.
(3) The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this
temperature may result in reduced reliability and/or lifetime of the device.
POWER RATING
(1)
(T
J
= +125 ° C)
θ
JC
θ
JA
PACKAGE ( ° C/W) ( ° C/W) AT T
A
= +25 ° C AT T
A
= +85 ° C
MicrostarCSP 9-Ball
100 250
(2)
400 mW 160 mW
(ZSV)
(1) Power rating is determined with a junction temperature of +125 ° C. This temperature is the point where performance starts to degrade
and long-term reliability starts to be reduced. Thermal management of the final printed circuit board (PCB) should strive to keep the
junction temperature at or below +125 ° C for best performance and reliability.
(2) These data were measured with the JEDEC High-K test PCB. For the JEDEC low-K test PCB, θ
JA
is +550 ° C/W.
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