Datasheet
ABSOLUTE MAXIMUM RATINGS
(1)
DISSIPATION RATINGS
THS6184
SLLS635D – AUGUST 2005 – REVISED JANUARY 2009 .................................................................................................................................................
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Over operating free-air temperature range (unless otherwise noted).
UNIT
V
S –
to V
S+
Supply voltage 33 V
V
I
Input voltage ± V
S
V
ID
Differential input voltage ± 2 V
I
O
Output current – Static DC
(2)
± 100 mA
Continuous power dissipation See Dissipation Rating Table
Maximum junction temperature, any condition
(3)
150 ° C
T
J
Maximum junction temperature, continuous operation, long term reliability
(4)
130 ° C
Tstg Storage temperature range – 65 ° C to 150 ° C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 300 ° C
HBM 900 V
ESD ratings CDM 1500 V
MM 100 V
(1) Stresses above those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied Exposure to absolute maximum rated conditions for extended periods may degrade device reliability.
(2) The THS6184 incorporates a PowerPAD™ on the underside of the chip. This acts as a heatsink and must be connected to a thermally
dissipating plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could
permanently damage the device. See TI Technical Brief SLMA002 for more information about utilizing the PowerPAD™ thermally
enhanced package. Under high frequency ac operation ( > 10 kHz), the short-term output current capability is much greater than the
continuous DC output current rating. This short-term output current rating is about 8.5 × the dc capability, or about ± 850 mA.
(3) The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.
(4) The absolute maximum junction temperature for continuous operation is limited by the package constraints. Continuous operation above
this temperature may result in reduced reliability and/or lifetime of the device.
POWER RATING
(2)
T
J
= 130 ° C
PACKAGE θ
JC
( ° C/W) θ
JA
( ° C/W)
(1)
T
A
= 25 ° C T
A
= 85 ° C
QFN-24 (RHF) 1.7 32
(3)
3.3 W 1.4 W
HTSSOP-20 (PWP) 27.5 45 2.3 W 1 W
(1) This data was taken using a 4-layer, 3-inch × 3-inch test PCB with the PowerPAD soldered to the PCB. For high power dissipation
applications, soldering the PowerPAD to the PCB is required. Failure to do so may result in reduced reliability and/or lifetime of the
device. See TI technical brief SLMA002 for more information about utilizing the PowerPAD thermally enhanced package.
(2) Power rating is determined with a junction temperature of 130 ° C. This is the point where distortion starts to substantially increase and
long-term reliability starts to be reduced. Thermal management of the final PCB should strive to keep the junction temperature at or
below 125 ° C for best performance and reliability.
(3) If the PowerPAD is not soldered to the PCB, the θ
JA
increases to 74 ° C/W for the RHF package.
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