Datasheet
ABSOLUTE MAXIMUM RATINGS
(1)
DISSIPATION RATINGS TABLE (PER PACKAGE)
THS4508
SLAS459E – SEPTEMBER 2005 – REVISED SEPTEMBER 2008 ....................................................................................................................................
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Over operating free-air temperature range (unless otherwise noted).
UNIT
V
SS
Supply voltage V
S –
to V
S+
5.5 V
V
I
Input voltage ± V
S
V
ID
Differential input voltage 4 V
I
O
Output current 200 mA
Continuous power dissipation See Dissipation Rating Table
T
J
Maximum junction temperature
(2)
+150 ° C
T
J
Maximum junction temperature, continuous operation, long term reliability
(3)
+125 ° C
T
A
Operating free-air temperature range – 40 ° C to +85 ° C
T
stg
Storage temperature range – 65 ° C to +150 ° C
HBM 2000 V
ESD ratings CDM 1500 V
MM 100 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
(3) The maximum junction temperature for continuous operation is limited by the package constraints. Operation above this temperature
may result in reduced reliability and/or lifetime of the device. The THS4508 incorporates a (QFN) exposed thermal pad on the underside
of the chip. This acts as a heatsink and must be connected to a thermally dissipative plane for proper power dissipation. Failure to do so
may result in exceeding the maximum junction temperature which could permanently damage the device. See TI technical brief
SLMA002 and SLMA004 for more information about utilizing the QFN thermally enhanced package.
POWER RATING
PACKAGE θ
JC
θ
JA
T
A
≤ 25 ° C T
A
= 85 ° C
RGT (16) 2.4 ° C/W 39.5 ° C/W 2.3 W 225 mW
ORDERING INFORMATION
(1)
SPECIFIED
PACKAGE- PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT MEDIA,
PRODUCT LEAD DESIGNATOR RANGE MARKING NUMBER QUANTITY
THS4508RGTT Tape and Reel, 250
THS4508 QFN-16 RGT – 40 ° C to +85 ° C THS4508
THS4508RGTR Tape and Reel, 3000
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com .
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