Datasheet

www.ti.com
ELECTRICAL CHARACTERISTICS
THS4304
SLOS436A – MARCH 2004 – REVISED JULY 2004
Specifications: V
S
= 3 V: R
F
= 249 Ω, R
L
= 499 Ω, and G = +2 unless otherwise noted
TYP OVER TEMPERATURE
TEST
–40°C
PARAMETER CONDITIONS
0°C to MIN/
LEVEL
(1)
25°C 25°C to UNITS
70°C MAX
85°C
AC PERFORMANCE
G = +1, V
O
= 100 mVpp 3 GHz Typ C
G = +2, V
O
= 100 mVpp 900 MHz Typ C
Small-Signal Bandwidth
G = +5, V
O
= 100 mVpp 190 MHz Typ C
G = +10, V
O
= 100 mVpp 83 MHz Typ C
Gain Bandwidth Product G >+10 830 MHz Typ C
Large-Signal Bandwidth G = +2, V
O
= 1 V
PP
450 MHz Typ C
G = +2, V
O
= 1-V Step 750 V/µs Typ C
Slew Rate
G = +2, V
O
= 1-V Step 675 V/µs Typ C
Settling Time to 1% G = –2, V
O
= 0.5-V Step 4.5 ns Typ C
Settling Time to 0.1% G = –2, V
O
= 0.5-V Step 20 ns Typ C
Rise / Fall Times G = +2, V
O
= 0.5-V Step 1.5 ns Typ C
Harmonic Distortion
Second Harmonic Distortion G = +2, –92 dBc Typ C
V
O
= 0.5 V
PP
, R
L
= 499 Ω
–91 dBc Typ
Third Harmonic Distortion C
f = 10 MHz
Noise Figure G = +2, f = 1 GHz 15 dB Typ C
Input Voltage Noise f = 1 MHz 2.4 nV/√Hz Typ C
Input Current Noise f = 1 MHz 2.1 pA/√Hz Typ C
DC PERFORMANCE
Open-Loop Voltage Gain (A
OL
) V
O
= ± 0.5 V, V
CM
= 1.5 V 49 44 dB Min A
Input Offset Voltage 2 4 5 5 mV Max A
Input Offset Voltage Drift 5 5 µV/°C Typ B
Input Bias Current 7 12 18 18 µA Max A
V
CM
= 1.5 V
Input Bias Current Drift 50 50 nA/°C Typ B
Input Offset Current 0.4 1 1.2 1.2 µA Max A
Input Offset Current Drift 10 10 nA/°C Typ B
INPUT CHARACTERISTICS
–0.2 0.2 to 0.4 to 0.4 to
Common-Mode Input Range V Min A
to 3.2 2.8 2.6 2.6
Common-Mode Rejection Ratio V
O
= ± 0.09 V, V
CM
= 1.5 V 92 80 70 70 dB Min A
Input Resistance 100 kΩ Typ C
Each input, referenced to GND
Input Capacitance 1.5 pF Typ C
(1) Test levels: (A) 100% tested at 25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and
simulation. (C) Typical value only for information.
6