Datasheet

V
n
I
n
1
10 100 1 k
− Voltage Noise −
10
f − Frequency − Hz
VOLTAGE NOISE AND CURRENT NOISE
vs
FREQUENCY
20
10 k 100 k
V
n
nV/ Hz
V
CC
= ± 15 V AND ± 5 V
T
A
= 25°C
− Current Noise −I
n
pA/ Hz
THS4031
THS4032
SLOS224G –JULY 1999–REVISED MARCH 2010 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
(1)
PACKAGED DEVICES
NUMBER OF EVALUATION
PLASTIC PLASTIC MSOP
(2)
(DGN)
(3)
T
A
CERAMIC DIP CHIP CARRIER
CHANNELS MODULE
SMALL
(JG) (FK)
DEVICE SYMBOL
OUTLINE
(2)
(D)
1 THS4031CD THS4031CDGN TIACM — — THS4031EVM
0°C to 70°C
2 THS4032CD THS4032CDGN TIABD — — THS4032EVM
1 THS4031ID THS4031IDGN TIACN — — —
–40°C to 85°C
2 THS4032ID THS4032IDGN TIABG — — —
–55°C to 125°C 1 — — — THS4031MJG THS4031MFK —
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) The D and DGN packages are available taped and reeled. Add an R suffix to the device type (that is, THS4031CDGNR).
(3) The PowerPAD™ on the underside of the DGN package is electrically isolated from all other pins and active circuitry. Connection to the
PCB ground plane is recommended, although not required, as this copper plane is typically the largest copper plane on the PCB.
2 Submit Documentation Feedback Copyright © 1999–2010, Texas Instruments Incorporated
Product Folder Link(s): THS4031 THS4032