Datasheet

ELECTRICAL CHARACTERISTICS
THS3201-EP
www.ti.com ..................................................................................................................................................... SGLS283B – APRIL 2005 – REVISED JANUARY 2009
V
S
= ± 7.5 V: R
f
= 1 k Ω , R
L
= 100 Ω , G = +2 (unless otherwise noted)
OVER
TYP
MIN/
TEMPERATURE
PARAMETER TEST CONDITIONS UNIT TYP/
– 55 ° C to
MAX
25 ° C 25 ° C
125 ° C
AC Performance
G = +1, R
F
= 1.2 k Ω 1.8 GHz
G = +2, R
F
= 768 Ω 850
Small-signal bandwidth, – 3 dB
Typ
(V
O
= 200 mV
PP
)
G = +5, R
F
= 619 Ω 565 MHz
G = +10, R
F
= 487 Ω 520
Bandwidth for 0.1-dB flatness G = +2, V
O
= 200 mV
pp
, R
F
= 768 Ω 380 MHz Typ
Large-signal bandwidth G = +2, V
O
= 2 V
pp
, R
F
= 715 Ω 880 MHz Typ
G = +2, V
O
= 5-V step, R
F
= 768 Ω ,
5400/4000
Rise/fall
Slew rate (25% to 75% level) V/ µ s Typ
G = +2, V
O
= 10-V step, R
F
= 768 Ω ,
9800/6700
Rise/fall
G = +2, V
O
= 4-V step, R
F
= 768 Ω ,
Rise and fall time 0.7/0.9 ns Typ
Rise/fall
Settling time to 0.1% 20
G = – 2, V
O
= 2-V step ns Typ
Settling time to 0.01% 60
Harmonic distortion
Second-order harmonic G = +5, f = 10 MHz, V
O
= 2 V
pp,
R
L
= 100 Ω – 64
dBc Typ
Third-order harmonic – 73
Third-order intermodulation G = +10, f
c
= 20 MHz, Δ f = 1 MHz,
– 78 dBc Typ
distortion (IMD
3
) V
O(envelope)
= 2 V
pp
G = +10, f
c
= 100 MHz, R
F
= 255 Ω ,
Noise figure 11 dB Typ
R
G
= 28
Input voltage noise f > 10 MHz 1.65 nV/ √ Hz Typ
Input current noise (noninverting) 13.4 pA/ √ Hz Typ
f > 10 MHz
Input current noise (inverting) 20 pA/ √ Hz Typ
NTSC 0.008
G = +2, R
L
= 150 Ω ,
Differential gain % Typ
R
F
= 768 Ω
PAL 0.004
NTSC 0.007
G = +2, R
L
= 150 Ω ,
Differential phase ° Typ
R
F
= 768 Ω
PAL 0.011
DC Performance
Open-loop transimpedance gain V
O
= ± 4 V, R
L
= 1 k Ω 300 200 100 k Ω Min
Input offset voltage V
CM
= 0 V, R
L
= 1 k Ω ± 0.7 ± 4 ± 6 mV Max
Average offset voltage drift V
CM
= 0 V, R
L
= 1 k Ω ± 13 µ V/ ° C Typ
Input bias current (inverting) V
CM
= 0 V, R
L
= 1 k Ω ± 13 ± 65 ± 90 µ A Max
Average bias current drift ( – ) V
CM
= 0 V, R
L
= 1 k Ω ± 400 nA/ ° C Typ
Input bias current (noninverting) V
CM
= 0 V, R
L
= 1 k Ω ± 14 ± 40 ± 60 µ A Max
Average bias current drift (+) V
CM
= 0 V, R
L
= 1 k Ω ± 400 nA/ ° C Typ
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