Datasheet
_
+
768 Ω
+7.5 V
49.9 Ω
V
I
-7.5 V
50 Ω Source
Low-Noise, Low-Distortion, Wideband Application Circuit
NOTE
:
Power supply decoupling capacitors not shown
768 Ω
50 Ω
THS3201
49.9 Ω
50 Ω
0
1
2
3
4
5
6
7
8
100 k 1 M 10 M 100 M 1 G 10 G
f - Frequency - Hz
Noninverting Gain - dB
NONINVERTING SMALL SIGNAL
FREQUENCY RESPONSE
R
F
= 768 Ω
Gain = 2.
R
L
= 100 Ω,
V
O
= 0.2 V
PP
.
V
S
= ±7.5 V
ABSOLUTE MAXIMUM RATINGS
(1)
THS3201-EP
SGLS283B – APRIL 2005 – REVISED JANUARY 2009 .....................................................................................................................................................
www.ti.com
over operating free-air temperature range (unless otherwise noted)
V
S
Supply voltage 16.5 V
V
I
Input voltage ± V
S
I
O
Output current 175 mA
V
ID
Differential input voltage ± 3 V
Continuous power dissipation See Dissipation Ratings Table
T
J
Maximum junction temperature
(2)
150 ° C
T
J
Maximum junction temperature, continuous operation, long-term reliability
(3)
125 ° C
T
stg
Storage temperature range – 65 ° C to 150 ° C
Lead temperature 1,6 mm (1/16 in) from case for 10 s 300 ° C
Human body model 3000 V
ESD ratings Charged device model 1500 V
Machines model 100 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The absolute maximum ratings under any condition are limited by the constraints of the silicon process. Stresses above these ratings
may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These
are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(3) Long-term high-temperature storage and/or extended use at maximum recommended operating conditions may result in a reduction of
overall device life. See Figure 1 for additional information on thermal derating.
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