Datasheet
ABSOLUTE MAXIMUM RATINGS
PACKAGE DISSIPATION RATINGS
(1)
RECOMMENDED OPERATING CONDITIONS
THS3201
SLOS416C – JUNE 2003 – REVISED JUNE 2009 .............................................................................................................................................................
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Over operating free-air temperature range unless otherwise noted.
(1)
UNIT
V
S
Supply voltage 16.5 V
V
I
Input voltage ± V
S
I
O
Output current 175 mA
V
ID
Differential input voltage ± 3 V
Continuous power dissipation See Dissipation Rating Table
T
J
Maximum junction temperature
(2)
+150 ° C
T
J
Maximum junction temperature, continuous operation, long term reliability
(3)
+125 ° C
T
A
Operating free-air temperature range – 40 ° C to +85 ° C
T
STG
Storage temperature range – 65 ° C to +150 ° C
HBM 3000 V
ESD ratings CDM 1500 V
MM 100 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(3) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
POWER RATING
(3)
θ
JC
θ
JA
(2)
(T
J
= +125 ° C)
PACKAGE
( ° C/W) ( ° C/W)
T
A
≤ +25 ° C T
A
= +85 ° C
DBV (5) 55 255.4 391 mW 156 mW
D (8) 38.3 97.5 1.02 W 410 mW
DGN (8)
(1)
4.7 58.4 1.71 W 685 mW
DGK (8 pin) 54.2 260 385 mW 154 mW
(1) The THS3201 may incorporate a PowerPAD™ on the underside of the chip. This acts as a heat sink
and must be connected to a thermally dissipative plane for proper power dissipation. Failure to do so
may result in exceeding the maximum junction temperature which could permanently damage the
device. See TI technical briefs SLMA002 and SLMA004 for more information about utilizing the
PowerPAD thermally enhanced package.
(2) This data was taken using the JEDEC standard High-K test PCB.
(3) Power rating is determined with a junction temperature of +125 ° C. This is the point where distortion
starts to substantially increase. Thermal management of the final PCB should strive to keep the
junction temperature at or below +125 ° C for best performance and long term reliability.
MIN MAX UNIT
Dual supply ± 3.3 ± 7.5
Supply voltage V
Single supply 6.6 15
T
A
Operating free-air temperature range – 40 +85 ° C
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