Datasheet
THS3001
SLOS217H –JULY 1998–REVISED SEPTEMBER 2009.................................................................................................................................................
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
AVAILABLE OPTIONS
(1)
PACKAGED DEVICE
TRANSPORT MEDIA, EVALUATION
T
A
SOIC MSOP MSOP
QUANTITY MODULE
(D) (DGN) SYMBOL
THS3001CD THS3001CDGN Rails, 75 THS3001EVM
ADP
THS3001CDR THS3001CDGNR Tape and Reel, 2500 --
0°C to 70°C
THS3001HVCDGN Rails, 75 --
BNK
THS3001HVCDGNR Tape and Reel, 2500 --
THS3001ID THS3001IDGN Rails, 75 --
ADQ
THS3001IDR THS3001IDGNR Tape and Reel, 2500 --
-40°C to 85°C
THS3001HVIDGN Rails, 75 --
BNJ
THS3001HVIDGNR Tape and Reel, 2500 --
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
over operating free-air temperature range (unless otherwise noted)
THS3001 THS3001HV UNITS
V
SS
Supply voltage, V
CC+
to V
CC-
33 37 V
V
I
Input voltage ±V
CC
±V
CC
V
I
O
Output current 175 175 mA
V
ID
Differential input voltage ±6 ±6 V
Continuous total power dissipation See Dissipation Rating Table
T
J
Maximum junction temperature
(2)
150 150 °C
T
J
Maximum junction temperature, continuous operation, long term reliability
(3)
125 125 °C
THS3001C,
0 to 70 0 to 70 °C
THS3001HVC
T
A
Operating free-air temperature
THS3001I,
–40 to 85 –40 to 85 °C
THS3001HVI
T
stg
Storage temperature –65 to 125 –65 to 125 °C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
(3) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
DISSIPATION RATING TABLE
POWER RATING
(2)
θ
JC
θ
JA
(1)
PACKAGE
(°C/W) (°C/W)
T
A
≤ 25°C T
A
= 85°C
D (8) 38.3 97.5 1.02 W 410 mW
DGN (8) 4.7 58.4 1.71 W 685 mW
(1) This data was taken using the JEDEC standard High-K test PCB.
(2) Power rating is determined with a junction temperature of 125°C. This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the junction temperature at or below 125°C for best performance and long
term reliability.
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