Datasheet
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PACKAGE DISSIPATION RATINGS
THERMAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
TB5D1M , TB5D2H
SLLS579C – SEPTEMBER 2003 – REVISED JANUARY 2008
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
PART NUMBER PART MARKING PACKAGE LEAD FINISH STATUS
TB5D1MDW TB5D1M Gull-wing SOIC NiPdAu Production
TB5D1MD TB5D1M SOIC NiPdAu Production
TB5D2HDW TB5D2H Gull-wing SOIC NiPdAu Production
TB5D2HD TB5D2H SOIC NiPdAu Production
CIRCUIT T
A
≤ 25°C THERMAL RESISTANCE, DERATING FACTOR
(1)
T
A
= 85C POWER
PACKAGE BOARD POWER JUNCTION-TO-AMBIENT ABOVE T
A
= 25C RATING
MODEL RATING WITH NO AIR FLOW
Low-K
(2)
754 mW 132.6 C/W 7.54 mW/C 301 mW
D
High-K
(3)
1166 mW 85.8 C/W 11.7 mW/C 466 mW
Low-K
(2)
816 mW 122.5 C/W 8.17 mW/C 326 mW
DW
High-K
(3)
1206 mW 82.9 C/W 12.1 mW/C 482 mW
(1) This is the inverse of the junction-to-ambient thermal resistance when board-mounted with no air flow.
(2) In accordance with the low-K thermal metric definitions of EIA/JESD51-3.
(3) In accordance with the high-K thermal metric definitions of EIA/JESD51-7.
PARAMETER PACKAGE VALUE UNITS
D 51.4 C/W
θ
JB
Junction-to-board thermal resistance
DW 56.6 C/W
D 45.7 C/W
θ
JC
Junction-to-case thermal resistance
DW 49.2 C/W
over operating free-air temperature range unless otherwise noted
(1)
TB5D1M, TB5D2H
Supply voltage, V
CC
0 V to 6 V
Input voltage - 0.3 V to (V
CC
+ 0.3 V)
Human Body Model
(2)
All Pins 3 kV
ESD
Charged-Device Model
(3)
All Pins 2 kV
Continuous power dissipation See Dissipation Rating Table
Storage temperature, T
stg
-65C to 130C
Junction temperature, T
J
130C
D Package -80 V to 100 V
Lightning surge, TB5D1M only, see Figure 6
DW Package -100 V to 100 V
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Tested in accordance with JEDEC Standard 22, Test Method A114-A.
(3) Tested in accordance with JEDEC Standard 22, Test Method C101.
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