Datasheet

−100
−90
−80
−70
−60
−50
−40
f − Frequency − Hz
Crosstalk − dB
G015
20 100 1k 10k 20k
Left to Right
Right to Left
P
O
= 1 W
PVCC = 24 V
R
L
= 8
DETAILED DESCRIPTION
POWER SUPPLY
TAS5710
www.ti.com
............................................................................................................................................................................................... SLOS605 JANUARY 2009
TYPICAL CHARACTERISTICS, BTL CONFIGURATION (continued)
CROSSTALK
vs
FREQUENCY
Figure 17.
To facilitate system design, the TAS5710 needs only a 3.3-V supply in addition to the 10-V to 26-V power-stage
supply. An internal voltage regulator provides suitable voltage levels for the gate drive circuitry. Additionally, all
circuitry requiring a floating voltage supply, e.g., the high-side gate drive, is accommodated by built-in bootstrap
circuitry requiring only a few external capacitors.
In order to provide good electrical and acoustical characteristics, the PWM signal path for the output stage is
designed as identical, independent half-bridges. For this reason, each half-bridge has separate bootstrap pins
(BST_X), and power-stage supply pins (PVCC_X). The gate drive voltages (VCLAMP_AB and VCLAMP_CD) are
derived from the PVCC voltage. Special attention should be paid to placing all decoupling capacitors as close to
their associated pins as possible. In general, inductance between the power-supply pins and decoupling
capacitors must be avoided.
For a properly functioning bootstrap circuit, a small ceramic capacitor must be connected from each bootstrap pin
(BST_X) to the power-stage output pin (OUT_X). When the power-stage output is low, the bootstrap capacitor is
charged through an internal diode connected between the gate-drive regulator output pin (VCLAMP_X) and the
bootstrap pin. When the power-stage output is high, the bootstrap capacitor potential is shifted above the output
potential and thus provides a suitable voltage supply for the high-side gate driver. In an application with PWM
switching frequencies in the range from 352 kHz to 384 kHz, it is recommended to use 220-nF ceramic
capacitors, size 0603 or 0805, for the bootstrap supply. These 220-nF capacitors ensure sufficient energy
storage, even during minimal PWM duty cycles, to keep the high-side power stage FET (LDMOS) fully turned on
during the remaining part of the PWM cycle.
Special attention should be paid to the power-stage power supply; this includes component selection, PCB
placement, and routing. As indicated, each half-bridge has independent power-stage supply pins (PVCC_X). For
optimal electrical performance, EMI compliance, and system reliability, it is important that each PVCC_X pin is
decoupled with a 100-nF ceramic capacitor placed as close as possible to each supply pin.
The TAS5710 is fully protected against erroneous power-stage turnon due to parasitic gate charging.
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