Datasheet

TAS5611
www.ti.com
SLAS681A DECEMBER 2009REVISED APRIL 2010
ELECTRICAL CHARACTERISTICS (continued)
PVDD_X = 32.5V, GVDD_X = 12 V, VDD = 12 V, T
C
(Case temperature) = 75°C, f
S
= 400 kHz, unless otherwise specified.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I/O PROTECTION
Undervoltage protection limit, GVDD_x and
V
uvp,G
9.5 V
VDD
V
uvp,hyst
(1)
0.6 V
OTW1
(1)
Overtemperature warning 1 95 100 105 °C
OTW2
(1)
Overtemperature warning 2 115 125 135 °C
Temperature drop needed below OTW
OTW
hyst
(1)
temperature for OTW to be inactive after 25 °C
OTW event.
Overtemperature error 145 155 165 °C
OTE
(1)
OTE-OTW differential 30 °C
A reset needs to occur for SD to be released
OTE
hyst
(1)
25 °C
following an OTE event
OLPC Overload protection counter f
PWM
= 400 kHz 2.6 ms
Resistor – programmable, nominal peak
12.6 A
current in 1 load, R
OCP
= 30k
Resistor – programmable, nominal peak
I
OC
Overcurrent limit protection
current in 1 load, R
OCP
= 22k (add
16.3 A
Schottky diodes on all output nodes
OUT_X to GND_X)
Resistor – programmable, nominal peak
12.6 A
current in 1 load, R
OCP
= 64k
Resistor – programmable, nominal peak
I
OC_LATCHED
Overcurrent limit protection
current in 1 load, R
OCP
= 47k (add
16.3 A
Schottky diodes on all output nodes
OUT_X to GND_X)
Time from switching transition to flip-state
I
OCT
Overcurrent response time 150 ns
induced by overcurrent
Connected when RESET is active to
Internal pulldown resistor at output of each
I
PD
provide bootstrap charge. Not used in SE 3 mA
half bridge
mode.
STATIC DIGITAL SPECIFICATIONS
V
IH
High level input voltage 1.9 V
INPUT_X, M1, M2, M3, RESET
V
IL
Low level input voltage 0.8 V
I
lkg
Input leakage current 100 mA
OTW/SHUTDOWN (SD)
Internal pullup resistance, OTW1 to VREG,
R
INT_PU
20 26 32 k
OTW2 to VREG, SD to VREG
Internal pullup resistor 3 3.3 3.6
V
OH
High level output voltage V
External pullup of 4.7 k to 5 V 4.5 5
V
OL
Low level output voltage I
O
= 4 mA 200 500 mV
Device fanout OTW1, OTW2, SD, CLIP,
FANOUT No external pullup 30 devices
READY
(1) Specified by design.
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