Datasheet

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RECOMMENDED OPERATING CONDITIONS
AUDIO CHARACTERISTICS
TAS5261
SLES188 – AUGUST 2006
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
PVDD_x Half-bridge supply voltage 0 50 52.5 V
GVDD_x Gate-drive power supply 10.8
(1)
12 13.2 V
VDD Digital regulator supply voltage 10.8
(1)
12 13.2 V
R
L
Resistive load impedance, bridge-tied load (BTL) 4-16 Ω
R
L
Resistive load impedance, BTL, R
OC
= 22k Ω , PVDD = 50V, (no current limiting) 3 Ω
Minimum output filter inductance under both operating and short-circuit conditions,
L
DEM
5 10 µ H
with appropriate OC_ADJ resistor value
f
S
PWM frame rate 192 384 kHz
t
(low)
Minimum low-state pulse duration per PWM frame, noise shaper enabled 50 ns
C
BS
Bootstrap capacitor, selected value supports f
s
= 192 kHz to 384 kHz 33 nF
R
BS
Bootstrap series resistor - 1/4 W 1.5 Ω
4.7 Ω
RC
BS
Bootstrap snubber - 1/4 W
470 pF
Ultra-Fast Recovery Clamping Diode, Average forward current = 1A, Maximum
D
CLMP
15 nS
repetitive reverse voltage = 200V (ES1D, mfg:Fairchild)
D
TVS
Transient Voltage Suppressor, 600W @ 1mS (P6SMB62AT3, mfg: ON Semiconductor) 62 V
C
PVDD
PVDD Close Decoupling Capacitor, two capacitors 100 nF
R
AGND
AGND resistor - 1/4 W 3.3 Ω
R Optional external pullup resistor to +3.3V or +5 V for SD and OTW 3.3 4.7 k Ω
T
J
Junction temperature 0 125 ° C
(1) GVDD operation below 10.8 V significantly reduces efficiency of the output MOSFET stage and requires a larger heatsink. For the
purpose of noise margin, the UVP level is set lower to provide an increased noise margin, however, TI recommends a nominal dc
voltage of 12 V for GVDD.
Audio frequency = 1 kHz, PVDD_x = 50 V, GVDD_x = 12 V, VDD = 12 V, R
L
= 8 Ω , f
s
= 384 kHz, OC_ADJ = 22 k Ω ,
T
C
= 75 ° C, output filter is L
DEM
= 10 µ H, C
L
= 1 µ F (unless otherwise noted). Audio performance is recorded as a chipset,
TAS5518 as front end with an effective modulation index of 96.1% and TAS5261 as the power stage. PCB and system
configuration are in accordance with recommended design guidelines.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
R
L
= 8 Ω , f = 1 kHz 125
P
O
Unclipped power output R
L
= 6 Ω , f = 1 kHz 165 W
R
L
= 4 Ω , f = 1 kHz 235
R
L
= 8 Ω , f = 1 kHz, THD = 10% 165
R
L
= 6 Ω , f = 1 kHz, THD = 10% 220
P
O
Maximum power output W
R
L
= 4 Ω , f = 1 kHz, THD = 10% 315
R
L
= 3 Ω , f = 1 kHz, CBC allowed 400
Total harmonic distortion + noise, 1 W to 125 W, RL=8 Ω , AES17 filter,
THD+N 0.09 %
AES 17 filter Unclipped
Ratio of 1-FFS to 0-FFS input,
SNR Signal-to-noise ratio
(1)
110 dB
A-weighted filter
DNR Dynamic range –60-dBFS input, A-weighted filter 110 dB
PWM switching frequency 384 kHz,
VOO Output offset voltage –15 15 mV
Measured on speaker terminals
Power dissipation due to idle losses
P
idle
P
O
= 0 W, Output switching
(2)
2 W
(I
PVDD_X
)
(1) SNR is calculated relative to the 0 dBFS input level.
(2) Actual system idle losses are also affected by core losses of output inductors.
8
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