Datasheet

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ELECTRICAL CHARACTERISTICS
TAS5261
SLES188 – AUGUST 2006
GVDD_x = 12 V ± 10%, VDD = 12 V ± 10%, T
J
= 25 ° C (unless otherwise noted)
PARAMETER CONDITIONS MIN TYP MAX UNIT
Logic-Level and Open-Drain Outputs
V
IH
High-level input voltage Static 2 V
V
IL
Low-level input voltage Static 0.8 V
Static, High PWM_A, High PWM_B,
45 65
High M1, High M2, High M3
Static, Low PWM_A, Low PWM_B,
–10 10
I
lkg
(1)
Input leakage current µ A
Low M1, Low M2, Low M3
Static, High RESET 20 40
Static, Low RESET –70 –50
Internal pulldown to AGND
R
INT-PD
50 k Ω
for PWM_A and PWM_B inputs
R
INT-PU
Internal pullup resistance on OTW and SD Resistor to VREG 20 28 33 k Ω
Internal pullup resistor 2.4 VREG
V
OH
High-level output voltage V
External pullup of 3.3 k Ω to 5 V 2.5 4.9
V
OL
Low-level output voltage I
O
= 4 mA 0.4 V
FANOUT Device fanout ( OTW, SD) External pullup to 5 V 10 Devices
(1) Pullup and pulldown resistors affect the leakage current.
10
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