Datasheet


SLES127AFEBRUARY 2005 − REVISED NOVEMBER 2005
www.ti.com
10
ELECTRICAL CHARACTERISTICS (continued)
R
L
= 4 . F
PWM
= 384 kHz, unless otherwise noted. All performance is in accordance with recommended operating conditions unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
TAS5152
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNITS
I/O Protection
V
uvp,G
Undervoltage protection limit, GVDD_x 9.8 V
V
uvp,hyst
(1)
Undervoltage protection hysteresis 250 mV
OTW
(1)
Overtemperature warning 115 125 135 _C
OTW
HYST
(1)
Temperature drop needed below OTW temp. for
OTW to be inactive after the OTW event
25 _C
OTE
(1)
Overtemperature error 145 155 165 _C
OTE-OTW
differential
(1)
OTE-OTW differential 30 _C
OTE
HYST
(1)
Temperature drop needed below OTE temp. for
SD to be released following an OTE event
25 _C
OLPC Overload protection counter F
pwm
= 384 kHz 1.25 ms
I
OC
Overcurrent limit protection
Resistor-programmable, high
end, R
OCP
= 15 k
8.5 10.8 11.8 A
I
OCT
Overcurrent response time 210 ns
R
OCP
OC programming resistor range Resistor tolerance = 5% 15 69 k
R
PD
Internal pulldown resistor at the output of each
half-bridge
Connected when RESET is
active to provide bootstrap
capacitor charge. Not used in
SE mode
2.5 k
Static Digital Specifications
V
IH
High-level input voltage
PWM_A, PWM_B, PWM_C,
PWM_D, M1, M2, M3,
2 V
V
IL
Low-level input voltage
PWM_D, M1, M2, M3,
RESET_AB, RESET_CD
0.8 V
Leakage Input leakage current –10 10 µA
OTW/SHUTDOWN (SD)
R
INT_PU
Internal pullup resistance, OTW to VREG, SD to
VREG
20 26 32 k
Internal pullup resistor 3 3.3 3.6
V
OH
High-level output voltage
External pullup of 4.7 k to
5 V
4.5 5
V
V
OL
Low-level output voltage I
O
= 4 mA 0.2 0.4 V
FANOUT Device fanout OTW , SD No external pullup 30 Devices
(1)
Specified by design