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SN75LBC241

LOW-POWER LinBiCMOS MULTIPLE DRIVERS AND RECEIVERS

SLLS137F – MAY 1992 – REVISED FEBRUARY 2001

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Operates With Single 5-V Power Supply

Meets or Exceeds the Requirements of

TIA/EIA-232-F and ITU Recommendation

V.28

Improved Performance Replacement for

MAX241

Operates at Data Rates up to 100 kbit/s

Over a 3-m Cable

Low-Power Shutdown Mode ... ≤1 µA Typ

LinBiCMOS Process Technology

Four Drivers and Five Receivers

±30-V Input Levels

3-State TTL/CMOS Receiver Outputs

±9-V Output Swing With a 5-V Supply

Applications

– TIA/EIA-232-F Interface

– Battery-Powered Systems

– Terminals

– Modems

– Computers

Packaged in Plastic Small-Outline Package

description

The SN75LBC241 is a low-power LinBiCMOS line-interface device containing four independent drivers and

five receivers. It is designed as a plug-in replacement for the Maxim MAX241. The SN75LBC241 provides a

capacitive-charge-pump voltage generator to produce RS-232 voltage levels from a 5-V supply. The

charge-pump oscillator frequency is 20 kHz. Each receiver converts RS-232 inputs to 5-V TTL/CMOS levels.

The receivers have a typical threshold of 1.2 V and a typical hysteresis of 0.5 V and can accept ±30-V inputs.

Each driver converts TTL/CMOS input levels into RS-232 levels.

The SN75LBC241 includes a receiver, a 3-state control line, and a low-power shutdown control line. When the

line is high, receiver outputs are placed in the high-impedance state. When EN is low, normal operation is

enabled.

The shutdown mode reduces power dissipation to less than 5 µW, typically. In this mode, receiver outputs have

high impedance, driver outputs are turned off, and the charge-pump circuit is turned off. When SHUTDOWN

is high, the shutdown mode is enabled. When SHUTDOWN is low, normal operation is enabled.

This device has been designed to conform to TIA/EIA-232-F and ITU Recommendation V.28.

The SN75LBC241 has been designed using LinBiCMOS technology and cells contained in the

Texas Instruments LinASIC library. Use of LinBiCMOS circuitry increases latch-up immunity in this device

over an all-CMOS design.

The SN75LBC241 is characterized for operation from 0°C to 70°C.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

TOUT3

TOUT1

TOUT2

RIN2

ROUT2

TIN2

TIN1

ROUT1

RIN1

GND

C1+

C1–

TOUT4

RIN3

ROUT3

SHUTDOWN

RIN4

ROUT4

TIN4

TIN3

ROUT5

RIN5

C2–

C2+

DW PACKAGE

(TOP VIEW)

LinBiCMOS and LinASIC are trademarks of Texas Instruments.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Summary of content (12 pages)

PAGE 1
SN75LBC241 LOW-POWER LinBiCMOS MULTIPLE DRIVERS AND RECEIVERS SLLS137F – MAY 1992 – REVISED FEBRUARY 2001 D D D D D D D D D D D D DW PACKAGE (TOP VIEW) Operates With Single 5-V Power Supply Meets or Exceeds the Requirements of TIA/EIA-232-F and ITU Recommendation V.28 Improved Performance Replacement for MAX241 Operates at Data Rates up to 100 kbit/s Over a 3-m Cable Low-Power Shutdown Mode . . .
PAGE 2
SN75LBC241 LOW-POWER LinBiCMOS MULTIPLE DRIVERS AND RECEIVERS SLLS137F – MAY 1992 – REVISED FEBRUARY 2001 logic symbol† VCC 11 SHUTDOWN DRV/RCV EN2 25 24 EN1 EN C1+ C1– C2+ C2– RIN1 RIN2 RIN3 RIN4 RIN5 TOUT1 TOUT2 TOUT3 TOUT4 12 13 VDD CX 14 CX 15 17 CX 16 VSS VSS CX 9 8 1,2 4 5 1,2 27 26 1,2 23 22 1,2 18 19 1,2 2 7 2 3 6 2 1 20 2 28 21 2 10 GND † This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
PAGE 3
SN75LBC241 LOW-POWER LinBiCMOS MULTIPLE DRIVERS AND RECEIVERS SLLS137F – MAY 1992 – REVISED FEBRUARY 2001 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Input supply voltage range, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 6 V Positive output supply voltage range, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCC –0.
PAGE 4
SN75LBC241 LOW-POWER LinBiCMOS MULTIPLE DRIVERS AND RECEIVERS SLLS137F – MAY 1992 – REVISED FEBRUARY 2001 electrical characteristics over recommended ranges of supply voltage and operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP† 9 TOUT RL = 3 kΩ to GND, See Note 3 5 ROUT IOH = –1 mA RL = 3 kΩ to GND, See Note 4 3.
PAGE 5
SN75LBC241 LOW-POWER LinBiCMOS MULTIPLE DRIVERS AND RECEIVERS SLLS137F – MAY 1992 – REVISED FEBRUARY 2001 PARAMETER MEASUREMENT INFORMATION VCC ≤10 ns ≤10 ns 90% 50% Input RL = 1.3 kΩ Generator (see Note A) 10% ROUT RIN 90% 50% 3V 10% 0V 500 ns tPLH(R) tPHL(R) See Note C CL = 50 pF (see Note B) VOH Output 1.5 V TEST CIRCUIT 1.5 V VOL VOLTAGE WAVEFORMS NOTES: A. The pulse generator has the following characteristics: ZO = 50 Ω, duty cycle ≤ 50%. B. CL includes probe and jig capacitance.
PAGE 6
SN75LBC241 LOW-POWER LinBiCMOS MULTIPLE DRIVERS AND RECEIVERS SLLS137F – MAY 1992 – REVISED FEBRUARY 2001 PARAMETER MEASUREMENT INFORMATION 3V EN 0V tPZH 3.5 V Generator (see Note A) RIN ROUT RL = 1 kΩ 0.8 V 2.5 V tPZL 3V CL = 150 pF (see Note B) EN 0V tPHZ TEST CIRCUIT VOH – 0.1 V VOL + 0.1 V tPLZ NOTES: A. The pulse generator has the following characteristics: ZO = 50 Ω, duty cycle ≤ 50%. B. CL includes probe and jig capacitance. Figure 4.
PAGE 7
SN75LBC241 LOW-POWER LinBiCMOS MULTIPLE DRIVERS AND RECEIVERS SLLS137F – MAY 1992 – REVISED FEBRUARY 2001 APPLICATION INFORMATION 5-V Input 11 12 C1 1 µF 6.3 V + 14 15 C2 1 µF 16 V + 16 VCC C1+ C1– C2+ 5-V to 10-V Voltage Doubler VDD 10-V to –10-V Voltage Inverter VSS 13 C3 1 µF + 6.
PAGE 8
PACKAGE OPTION ADDENDUM www.ti.
PAGE 9
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device SN75LBC241DWR Package Package Pins Type Drawing SOIC DW 28 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 1000 330.0 32.4 Pack Materials-Page 1 11.35 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 18.67 3.1 16.0 32.
PAGE 10
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) SN75LBC241DWR SOIC DW 28 1000 367.0 367.0 55.
PAGE 11
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