Datasheet

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  
SLRS028A − SEPTEMBER 1988 − REVISED NOVEMBER 2004
11
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
APPLICATION INFORMATION
driving power MOSFETs (continued)
Power MOSFET drivers must be capable of supplying high peak currents to achieve fast switching speeds as
shown by the equation:
I
PK
+
VC
t
r
where C is the capacitive load and t
r
is the desired rise time. V is the voltage that the capacitance is charged
to. In the circuit shown in Figure 14a, V is found by the equation:
V = V
OH
− V
OL
Peak current required to maintain a rise time of 100 ns in the circuit of Figure 14a is:
I
PK
+
(3 * 0)4(10
−9
)
100(10
−9
)
+ 120 mA
Circuit capacitance can be ignored because it is very small compared to the input capacitance of the IRF151.
With a V
CC
of 5 V and assuming worst-case conditions, the gate drive voltage is 3 V.
For applications in which the full voltage of V
CC2
must be supplied to the MOSFET gate, V
CC3
should be at least
3 V higher than V
CC2
.