Datasheet


   
  
SCES610 − OCTOBER 2004
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
recommended operating conditions (see Note 5)
V
CC
MIN MAX UNIT
V
CC
Supply voltage 2 5.5 V
2 V 1.5
V
IH
2.3 V to 2.7 V V
CC
× 0.7
V
V
IH
High-level input voltage
3 V to 3.6 V
V
CC
× 0.7
V
4.5 V to 5.5 V V
CC
× 0.7
2 V 0.5
V
IL
2.3 V to 2.7 V V
CC
× 0.3
V
V
IL
Low-level input voltage
3 V to 3.6 V
V
CC
× 0.3
V
4.5 V to 5.5 V V
CC
× 0.3
V
I
Input voltage 0 5.5 V
V
O
Output voltage
High or low state 0 V
CC
V
V
O
Output voltage
3-state
0 5.5
V
2 V −50 µA
I
OH
2.3 V to 2.7 V −2
I
OH
High-level output current
3 V to 3.6 V
−6
mA
4.5 V to 5.5 V −12
mA
2 V 50 µA
I
OL
2.3 V to 2.7 V 2
I
OL
Low-level output current
3 V to 3.6 V
6
mA
4.5 V to 5.5 V 12
mA
2.3 V to 2.7 V 200
T/C, OE inputs
3 V to 3.6 V 100
ns/V
t/v
Input transition rise or fall rate
T/C, OE inputs
4.5 V to 5.5 V 20
ns/V
t/v Input transition rise or fall rate
2.3 V to 2.7 V 4
A, B, D inputs
3 V to 3.6 V 3
ms/V
A, B, D inputs
4.5 V to 5.5 V 2
ms/V
T
A
Operating free-air temperature −40 85 °C
NOTES: 5. All unused inputs of the device must be held at V
CC
or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.