Datasheet

SCEA017
7–296 GTLP in BTL Applications
Glossary
BiCMOS Device technology that combines high drive of bipolar outputs with lower power
consumption of CMOS inputs
Bipolar Device technology that has high drive outputs, but has high power consumption
BTL Backplane transistor logic, which operates at signal levels of V
TT
= 2.1 V,
V
REF
= 1.55 V, and V
OL
= 1.1 V
CMOS Device technology that has balanced drive outputs and low power consumption
FB+ FutureBus Plus devices are designed to operate at BTL signal levels.
GTL Gunning transceiver logic, which operates at signal levels of V
TT
= 1.2 V,
V
REF
= 0.8 V, and V
OL
= 0.4 V
GTL+ A derivative of GTL that operates at higher-noise-margin signal levels of V
TT
= 1.5 V,
V
REF
= 1 V, and V
OL
= 0.55 V and moves V
REF
from the normal ground-bounce
area
GTLP Gunning transceiver logic plus, which normally is associated with optimized edge-rate
devices that allow higher-frequency operation in heavily loaded backplane
applications at GTL+ signal levels
R
TT
Bus line-termination resistance that should be equal to Z for incident-wave switching
and optimum signal integrity
Z Bus line loaded impedance, taking into account the natural impedance and capacitive
loads
Z
o
Bus line natural impedance that is set by type of line construction and dimensions
Acknowledgment
The author of this application report is Steve Blozis, with technical assistance from Susan Curtis
and Ernest Cox, and with technical review by Johannes Huchzermeier.