Datasheet

SN74AVC2T244
SCES767B SEPTEMBER 2011 REVISED SEPTEMBER 2011
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
DEVICE INFORMATION
PIN DESCRIPTION
PIN FUNCTION
VCCA Input Port DC Power Supply
VCCB Output Port DC Power Supply
GND Ground
An Input Port
Bn Output Port
OE Output Enable
ABSOLUTE MAXIMUM RATINGS
(1)
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
DC Supply voltage, V
CCA
V
CCB
0.5 4.6 V
DC Input voltage, V
I
A
n
0.5 4.6 V
Control Input, V
C
OE 0.5 4.6 V
(Power
Voltage
DC Output voltage, V
O
, V
CCA
= V
CCB
= 0 B
n
0.5 4.6
Down)
(Active V
B
n
0.5 4.6
Mode)
3-State Mode B
n
0.5 4.6
DC Input Diode current, I
IK
V
I
< GND 20 mA
DC Output Diode current, I
OK
V
O
< GND 50 mA
DC Output Source/Sink current, I
O
±50 mA
DC Supply current per supply pin, I
CCA
, I
CCB
±100 mA
I
GND
DC Ground current per ground pin ±100 mA
T
stg
Storage temperature range 65 150 °C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
MIN MAX UNIT
V
CCA
, V
CCB
Positive DC Supply voltage 0.9 3.6 V
V
I
Bus input voltage GND 3.6 V
V
I
Input voltage GND 3.6 V
V
C
Control input OE GND 3.6 V
(Power Down Mode) B
n
GND 3.6 V
V
O
Bus output voltage (Active Mode) B
n
GND V
CCB
V
3-State Mode B
n
GND 3.6 V
T
A
Operating free-air temperature 40 85 °C
Input transition rise or fall rate
Δt/Δv 0 10 nS
V
I
from 30% to 70% of V
CC
; V
CC
= 3.3 V ±0.3 V
2 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): SN74AVC2T244