Datasheet
SCES066G − JUNE 1996 − REVISED APRIL 2002
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
recommended operating conditions, V
CC
= 2.5 V ± 0.2 V (see Note 3)
SN54ALVTH16245 SN74ALVTH16245
UNIT
MIN TYP MAX MIN TYP MAX
UNIT
V
CC
Supply voltage 2.3 2.7 2.3 2.7 V
V
IH
High-level input voltage 1.7 1.7 V
V
IL
Low-level input voltage 0.7 0.7 V
V
I
Input voltage 0 V
CC
5.5 0 V
CC
5.5 V
I
OH
High-level output current −6 −8 mA
I
OL
Low-level output current 6 8
mA
I
OL
Low-level output current; current duty cycle ≤ 50%; f ≥ 1 kHz 18 24
mA
∆t/∆v Input transition rise or fall rate Outputs enabled 10 10 ns/V
∆t/∆V
CC
Power-up ramp rate 200 200 µs/V
T
A
Operating free-air temperature −55 125 −40 85 °C
NOTE 3: All unused control inputs of the device must be held at V
CC
or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
recommended operating conditions, V
CC
= 3.3 V ± 0.3 V (see Note 3)
SN54ALVTH16245 SN74ALVTH16245
UNIT
MIN TYP MAX MIN TYP MAX
UNIT
V
CC
Supply voltage 3 3.6 3 3.6 V
V
IH
High-level input voltage 2 2 V
V
IL
Low-level input voltage 0.8 0.8 V
V
I
Input voltage 0 V
CC
5.5 0 V
CC
5.5 V
I
OH
High-level output current −24 −32 mA
I
OL
Low-level output current 24 32
mA
I
OL
Low-level output current; current duty cycle ≤ 50%; f ≥ 1 kHz 48 64
mA
∆t/∆v Input transition rise or fall rate Outputs enabled 10 10 ns/V
∆t/∆V
CC
Power-up ramp rate 200 200 µs/V
T
A
Operating free-air temperature −55 125 −40 85 °C
NOTE 3: All unused control inputs of the device must be held at V
CC
or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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