Datasheet

SN74ALVC10
TRIPLE 3-INPUT POSITIVE-NAND GATE
SCES106D – JULY 1997 – REVISED OCTOBER 1998
2–21
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D EPIC (Enhanced-Performance Implanted
CMOS) Submicron Process
D ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
D Latch-Up Performance Exceeds 250 mA
Per JESD 17
D Package Options Include Plastic
Small-Outline (D), Thin Very Small-Outline
(DGV), and Thin Shrink Small-Outline (PW)
Packages
description
This triple 3-input positive-NAND gate is designed for 1.65-V to 3.6-V V
CC
operation.
The SN74ALVC10 performs the Boolean function Y = A
• B • C or Y = A + B + C in positive logic.
The SN74ALVC10 is characterized for operation from –40°C to 85°C.
FUNCTION TABLE
(each gate)
INPUTS
OUTPUT
A B C
Y
H H H L
L XX H
X LX H
X X L H
logic symbol
†
&
1
1A
2
1B
13
1C
1Y
12
3
2A
4
2B
5
2C
2Y
6
9
3A
10
3B
11
3C
3Y
8
†
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
Copyright  1998, Texas Instruments Incorporated
EPIC is a trademark of Texas Instruments Incorporated.
D, DGV, OR PW PACKAGE
(TOP VIEW)
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1A
1B
2A
2B
2C
2Y
GND
V
CC
1C
1Y
3C
3B
3A
3Y
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.