Datasheet

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PACKAGE DISSIPATION RATINGS
THERMAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
SN65MLVD080
SN65MLVD082
SLLS581B – SEPTEMBER 2003 – REVISED SEPTEMBER 2005
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
PART NUMBER RECEIVER TYPE PACKAGE MARKING PACKAGE/CARRIER
SN65MLVD080DGG Type 1 MLVD080 64-Pin TSSOP/Tube
SM65MLVD080DGGR Type 1 MLVD080 64-Pin TSSOP/Tape and Reeled
SN65MLVD082DGG Type 2 MLVD082 64-Pin TSSOP/Tube
SM65MLVD082DGGR Type 2 MLVD082 64-Pin TSSOP/Tape and Reeled
T
A
≤ 25 ° C DERATING FACTOR
(1)
T
A
= 85 ° C
PACKAGE PCB JEDEC STANDARD
POWER RATING ABOVE T
A
= 25 ° C POWER RATING
DGG Low-K
(2)
1204.7 mW 10.5 mW/ ° C 576 mW
DGG High-K
(3)
1839.4 mW 16.0 mW/ ° C 880 mw
(1) This is the inverse of the junction-to-ambient thermal resistance when board mounted and with no air flow.
(2) In accordance with the Low-K thermal metric definitions of EIA/JESD51-3.
(3) In accordance with the High-K thermal metric definitions of EIA/JESD51-7.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
θ
JB
Junction-to-board thermal resistance 41.08 ° C/W
θ
JC
Junction-to-case thermal resistance 6.78 ° C/W
V
CC
= 3.3 V, DE = V
CC
, RE = GND, C
L
= 15 pF,
477
R
L
= 50 Ω , 250 Mbps random data on each input
Device power dissipation mW
V
CC
= 3.6 V, DE = V
CC
, RE = GND, C
L
= 15 pF,
R
L
= 50 Ω , 250 Mbps data on one input and 125 MHz 854
(1)
clock on the others
(1) When all channels are running at a 125-MHz clock frequency, a 250 lfm is required for a low-K board, and 150 lfm is required for a
high-K board. In such applications, a TI 1:8 or dual 1:4 M-LVDS buffer is highly recommended, SN65MLVD128 or SN65MLVD129, to
fan out clock signals in multiple paths.
over operating free-air temperature range unless otherwise noted
(1)
SN65MLVD080, 082
Supply voltage range
(2)
, V
CC
–0.5 V to 4 V
D, DE, RE –0.5 V to 4 V
Input voltage range
A, B –1.8 V to 4 V
R –0.3 V to 4 V
Output voltage range
A, or B –1.8 V to 4 V
A, B ± 8 kV
Human Body Model
(3)
Electrostatic discharge All pins ± 2 kV
Charged-Device Model
(4)
All pins ± 1500 V
Continuous power dissipation See Dissipation Rating Table
Storage temperature range –65 ° C to 150 ° C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
(3) Tested in accordance with JEDEC Standard 22, Test Method A114-A.
(4) Tested in accordance with JEDEC Standard 22, Test Method C101.
2
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