Datasheet

ABSOLUTE MAXIMUM RATINGS
(1)
POWER DISSIPATION RATINGS
THERMAL CHARACTERISTICS
KEY ATTRIBUTES
SN65LVELT22
SLLS928 – DECEMBER 2008 ............................................................................................................................................................................................ www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
VALUE UNIT
Absolute PECL mode supply voltage, V
CC
GND = 0 V 6 V
V
IN
input voltage V
I
≤ V
CC
6 V
Continuous 50
Output current mA
Surge 100
Operating temperature range – 40 to 85 ° C
Storage temperature range – 65 to 150 ° C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
POWER RATING THERMAL RESISTANCE, DERATING FACTOR POWER RATING
CIRCUIT BOARD
JUNCTION TO AMBIENT
PACKAGE T
A
< 25 ° C T
A
> 25 ° C T
A
= 85 ° C
MODEL
NO AIRFLOW
(mW) (mW/ ° C) (mW)
SOIC Low-K 719 139 7 288
High-K 840 119 8 336
SOIC-TSSOP Low-K 469 213 5 188
High-K 527 189 5 211
PARAMETER PACKAGE VALUE UNIT
θ
JB
Junction-to Board Thermal Resistance SOIC 79 ° C/W
SOIC-TSSOP 120
θ
JC
Junction-to Case Thermal Resistance SOIC 98 ° C/W
SOIC-TSSOP 74
CHARACTERISTICS VALUE
Moisture sensitivity level Level 1
Flammability rating (Oxygen Index: 28 to 34) UL 94 V-0 at 0.125 in
ESD-HBM 4 kV
ESD-machine model 200 V
ESD-charge device model 2 kV
Meets or exceeds JEDEC Spec EIA/JESD78 latchup test
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