Datasheet

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TYPICAL MEMORY STICK INTERFACE EXTENSION
1Y
1Z
1D
1A
1B
5Y
5Z
1R
5D
2Y
2Z
2D
2A
2B
2R
3Y
3Z
3D
3A
3B
3R
4Y
4Z
4D
4A
4B
4R
5A
5B
5R
SCLK
BS
DIR
SD1
SD2
CBT
SCLK
BS
SDIO
Memory
Stick
CBT
SCLK
BS
SDIO
DIR
Memory
Stick
Host
Controller
SN65LVDT41 SN65LVDT14
ABSOLUTE MAXIMUM RATINGS
PACKAGE DISSIPATION RATINGS
SN65LVDT14
SN65LVDT41
SLLS530B – APRIL 2002 – REVISED FEBRUARY 2006
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
over operating free-air temperature range unless otherwise noted
(1)
SN65LVDT14,
UNIT
SN65LVDT41
Supply voltage range
(2)
V
CC
-0.5 to 4 V
D or R -0.5 to 6 V
Input voltage range
A, B, Y, or Z -0.5 to 4 V
Human body model
(3)
, A, B, Y, Z, and GND ±16 KV
Electrostatic discharge Human body model
(3)
, all pins ±8 KV
Charged device model
(4)
, all pins ±500 V
Continuous total power dissipation See Dissipation Rating Table
Storage temperature range -65 to 150 °C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential I/O bus voltages are with respect to network ground terminal.
(3) Tested in accordance with JEDEC Standard 22, Test Method A114-A.
(4) Tested in accordance with JEDEC Standard 22, Test Method C101.
T
A
<25°C OPERATING FACTOR T
A
= 85°C
PACKAGE
POWER RATING ABOVE T
A
= 25°C POWER RATING
PW 774 mW 6.2 mW/°C 402 mW
2
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