Datasheet

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APPLICATION INFORMATION
10
1
0.1
Transmission Distance − m
100
Signaling Rate − Mbps
TRANSMISSION DISTANCE
vs
SIGNALING RATE
10 100 1000
5% Jitter
(see Note A)
30% Jitter
(see Note A)
24 AWG UTP 96 Ω
(PVC Dielectric)
1A
1Y
1Z
G
2Z
2Y
2A
GND
V
CC
4A
4Y
4Z
G
3Z
3Y
3A
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Z
O
= 100 Ω
Z
O
= 100 Ω
Z
O
= 100 Ω
Z
O
= 100 Ω
3.3 V
0.1 µF
(see Note A)
0.001 µF
(see Note A)
V
CC
See Note B
NOTES: A. Place a 0.1-µF and a 0.001-µF Z5U ceramic, mica, or polystyrene dielectric, 0805 size, chip capacitor between V
CC
and the ground
plane. The capacitors should be located as close as possible to the device terminals.
B. Unused enable inputs should be tied to V
CC
or GND, as appropriate.
SN55LVDS31, SN65LVDS31
SN65LVDS3487, SN65LVDS9638
SLLS261L – JULY 1997 – REVISED JULY 2007
The devices are generally used as building blocks for high-speed point-to-point data transmission where ground
differences are less than 1 V. Devices can interoperate with RS-422, PECL, and IEEE-P1596. Drivers/receivers
approach ECL speeds without the power and dual supply requirements.
A. This parameter is the percentage of distortion of the unit interval (UI) with a pseudorandom data pattern.
Figure 8. Typical Transmission Distance Versus Signaling Rate
Figure 9. Typical Application Circuit Schematic
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