Datasheet

DESCRIPTION CONTINUED
INPUT OUTPUTS
D
H
L
Open
Y Z
H
L
L
L
H
H
DRIVER
INPUTS OUTPUT
R
H
?
L
V
ID
= V
A
− V
B
V
ID
≥ 100 mV
−100 mV < V
ID
< 100 mV
V
ID
≤ −100 mV
Open H
H = high level, L = low level , ? = indeterminate
RECEIVER
FUNCTION TABLES
DRIVER EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS
300 kΩ
50 Ω
V
CC
7 V
D Input
5 Ω
10 kΩ
7 V
Y or Z
Output
V
CC
SN65LVDS1
SN65LVDS2
SN65LVDT2
SLLS373K – JULY 1999 – REVISED NOVEMBER 2008 .................................................................................................................................................... www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
When the SN65LVDS1 is used with an LVDS receiver (such as the SN65LVDT2) in a point-to-point connection,
data or clocking signals can be transmitted over printed-circuit-board traces or cables at very high rates with very
low electromagnetic emissions and power consumption. The packaging, low power, low EMI, high ESD
tolerance, and wide supply voltage range make the device ideal for battery-powered applications.
The SN65LVDS1, SN65LVDS2, and SN65LVDT2 are characterized for operation from – 40 ° C to 85 ° C.
2 Submit Documentation Feedback Copyright © 1999 – 2008, Texas Instruments Incorporated
Product Folder Link(s): SN65LVDS1 SN65LVDS2 SN65LVDT2