Datasheet

EN2
EN1
B
A
Z
Y
R
RE
D
DE
11
12
10
9
2
3
5
4
2
1
1
R
RE
DE
D
B
A
Z
Y
11
12
10
9
2
3
4
5
SN65LBC180A
SN75LBC180A
SLLS378D – MAY 2000 – REVISED APRIL 2009 ............................................................................................................................................................... www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
LOGIC SYMBOL
(1)
LOGIC DIAGRAM (POSITIVE LOGIC)
(1) This symbol is in accordance with
ANSI/IEEE Std 91-1984 and IEC
Publication 617-12.
AVAILABLE OPTIONS
(1)
PACKAGE
PLASTIC
T
A
SMALL OUTLINE
(2)
DUAL-IN-LINE
(D)
(N)
0 ° C to 70 ° C SN75LBC180AD SN75LBC180AN
– 40 ° C to 85 ° C SN65LBC180AD SN65LBC180AN
(1) For the most current package and ordering information, see the Package Option Addendum at the end
of this document, or see the TI website at www.ti.com .
(2) The D package is available taped and reeled. Add an R suffix to the part number (i.e.,
SN65LBC180ADR).
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Product Folder Link(s): SN65LBC180A SN75LBC180A