Datasheet
THERMAL CHARACTERISTICS
SN65HVDA540
SN65HVDA541
SLLS981 – MAY 2009 ........................................................................................................................................................................................................
www.ti.com
over recommended operating conditions, T
J
= – 40 ° C to 150 ° C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
11.1 Low-K thermal resistance
(2)
140
Junction-to-air thermal
θ
JA
° C/W
resistance
(1)
11.2 High-K thermal resistance
(2)
109
Junction-to-board thermal
11.3 θ
JB
50 ° C/W
resistance
Junction-to-case thermal
11.4 θ
JC
56 ° C/W
resistance
V
CC
= 5 V, V
IO
= 3.3V, T
J
= 27 ° C, R
L
= 60 Ω ,
STB at 0 V, Input to TXD at 500 kHz,
11.5 112
50% duty cycle square wave,
C
L
at RXD = 15 pF
P
D
Average power dissipation mW
V
CC
= 5.5 V, V
IO
= 3.3V, T
J
= 130 ° C,
11.6 R
L
= 45 Ω , STB at 0 V, Input to TXD at 500 kHz, 170
50% duty cycle square wave, C
L
at RXD = 15 pF
11.7 Thermal shutdown temperature 185 ° C
(1) The junction temperature (T
J
) is calculated using the following T
J
= T
A
+ (P
D
× θ
JA
)
(2) Tested in accordance with the Low-K (EIA/JESD51-3) or High-K (EIA/JESD51-7) thermal metric definitions for leaded surface-mount
packages.
OPERATING MODE SELECTION
V
CC
V
IO
STB
(1)
BUS STATE RXD STATE
V
CC
≥ UV
VCC
V
IO
≥ UV
VIO
L Normal Mode Mirrors bus state
V
CC
≥ UV
VCC
V
IO
≥ UV
VIO
H Standby Mode Mirrors bus state via wake-up filter
(2)
V
CC
≤ UV
VCC
V
IO
≥ UV
VIO
X Standby Mode (Forced) Mirrors bus state via wake-up filter
(2)
V
CC
≥ UV
VCC
V
IO
≤ UV
VIO
X Standby Mode (Forced)
(3)
3-state
(1) H = high level, L = low level, X = irrelevant
(2) SN65HVDA541 only. SN65HVDA540 RXD state is recessive.
(3) When V
IO
is undervoltage, the device is forced into standby mode with respect to the CAN bus since there is not a valid digitial
reference to determine the digital I/O states or power the wake-up receiver.
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