Datasheet

SN65HVDA195-Q1
SLLS961A –JULY 2009–REVISED OCTOBER 2009 www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
V
SUP
= 7 V to 27 V, T
A
= –40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP
(1)
MAX UNIT
LIN PIN (Referenced to V
SUP
)
LIN recessive, TXD = High,
5.1 V
OH
High-level output voltage V
SUP
– 1
I
O
= 0 mA, V
SUP
= 14 V
V
LIN dominant, TXD = Low,
5.2 V
OL
Low-level output voltage 0 0.2 × V
SUP
I
O
= 40 mA, V
SUP
= 14 V
5.3 R
slave
Pullup resistor to V
SUP
Normal and standby modes 20 30 60 kΩ
Pullup current source to
5.4 Sleep mode, V
SUP
= 14 V, LIN = GND –2 –20 μA
V
SUP
5.5 TXD = 0 V 45 160 220
I
L
Limiting current mA
5.6 TXD = 0 V, T
A
= –10°C to 125°C 200
5.7 I
LKG
Leakage current LIN = V
SUP
–5 0 5
5.8 7 V < LIN ≤ 12 V, V
SUP
= GND 5 μA
Leakage current, loss of
I
LKG
supply
5.9 12 V < LIN < 18 V, V
SUP
= GND 10
5.10 V
IL
Low-level input voltage LIN dominant 0.4 × V
SUP
5.11 V
IH
High-level input voltage LIN recessive 0.6 × V
SUP
5.12 V
IT
Input threshold voltage 0.4 × V
SUP
0.5 × V
SUP
0.6 × V
SUP
V
0.05 × 0.175 ×
5.13 V
hys
Hysteresis voltage
V
SUP
V
SUP
Low-level input voltage for
5.14 V
IL
0.4 × V
SUP
wake-up
EN PIN
6.1 V
IL
Low-level input voltage –0.3 0.8
V
6.2 V
IH
High-level input voltage 2 5.5
6.3 V
hys
Hysteresis voltage 30 500 mV
6.4 Pulldown resistor 125 350 800 kΩ
6.5 I
IL
Low-level input current EN = Low –5 0 5 μA
INH PIN
7.1 V
o
DC output voltage –0.3 V
SUP
+ 0.3 V
Between V
SUP
and INH,
7.2 R
on
On state resistance INH = 2-mA drive, 35 85 Ω
Normal or standby mode
7.3 I
IKG
Leakage current Low-power mode, 0 < INH < V
SUP
–5 0 5 μA
NWake PIN
8.1 V
IL
Low-level input voltage –0.3 V
SUP
– 3.3
V
8.2 V
IH
High-level input voltage V
SUP
– 1 V
SUP
+ 0.3
8.3 Pullup current NWake = 0 V –45 –10 –2
μA
8.4 I
IKG
Leakage current V
SUP
= NWake –5 0 5
THERMAL SHUTDOWN
Shutdown junction thermal
9.1 190 °C
temperature
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