Datasheet

R
RE
DE
D
A
B
Vcc
GND
1
2
3
4
7
6
5
Vcc
10k
10k
XCVR
TVS
R1
R2
TBU1
TBU2
MOV1
MOV2
8
Vcc
0.1μF
RxD
TxD
DIR
MCU
R
RE
DE
D
A
B
Vcc
GND
1
2
3
4
7
6
5
Vcc
10k
10k
XCVR
TVS
R1
R2
8
Vcc
0.1μF
RxD
TxD
DIR
MCU
100
0.1
0.01
10
1
10
-3
10
-4
10
-5
10
-6
Pulse Energy - Joule
0.5 1 2 4 6 8 10
Peak Pulse Voltage - kV
1000
ESD
EFT
Surge
15
EFT Pulse Train
SN65HVD82
www.ti.com SLLSED6 –OCTOBER 2012
Figure 21. Comparison of Transient Energies
Figure 22 suggests two circuit designs providing protection against surge transients. Table 1 presents the
associated bill of material.
Table 1. Bill of Materials
Device Function Order Number Manufacturer
XCVR 3.3V, 250kbps RS-485 Transceiver SN65HVD82D TI
R1,R2 10Ω, Pulse-Proof Thick-Film Resistor CRCW0603010RJNEAHP Vishay
TVS Bidirectional 400W Transient Suppressor CDSOT23-SM712 Bourns
TBU1,TBU2 Bidirectional. 200mA Transient Blocking Unit TBU-CA-065-200-WH Bourns
MOV1,MOV2 200V, Metal-Oxide Varistor MOV-10D201K Bourns
Figure 22. Transient Protection Against ESD, EFT, and Surge Transients
Both circuits are designed for 10 kV ESD and 4 kV EFT transient protection. The left however provides surge
protection of ≥ 500 V transients only, while the right protection circuits can withstand surge transients of 5 kV.
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