Datasheet

Pulse Power - kW
22
20
18
16
14
12
10
8
6
4
2
0
Time - sμ
0 5 10 15 20 25 30 35 40
0.5kV Surge
10kV ESD
4kV EFT
Pulse Power - MW
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Time - sμ
0 5 10 15 20 25 30 35 40
0.5kV Surge
6kV Surge
3.0
2.8
2.6
2.4
R
C
R
D
C
S
High-Voltage
Pulse
Generator
Device
Under
Test
Current - A
40
35
30
25
20
15
10
5
0
Time - ns
0 50 100 150 200 250 300
10kV IEC
10kV HBM
330Ω
(1.5k)
150pF
(100pF)
50M
(1M)
SN65HVD82
SLLSED6 –OCTOBER 2012 www.ti.com
Figure 19. HBM and IEC-ESD Models and Currents in Comparison
EFTs are usually caused by relay contact bounce or the interruption of inductive loads, while surge transients
often results from lightning strikes (direct strike or induced voltages and currents due to an indirect strike), or the
switching of power systems including load changes and short circuits switching. These transients are often
encountered in industrial environments, such as factory automation and power-grid systems.
Figure 20 compares the pulse-power of the EFT and surge transients with the power caused by an IEC-ESD
transient. As can be seen the tiny blue blip in the bottom left corner of the left diagram represents the power of a
10 kV ESD transient, which already dwarfs against the significantly higher EFT power spike and certainly against
the 500 V surge transient. This type of transient power is well representative for factory environments in industrial
and process automation. The right diagram compares the enormous power of a 6kV surge transient, which more
likely occurs in e-metering applications of power generating and power grid systems, with the aforementioned
500 V surge transient. Note that the unit of the pulse-power changes from kW to MW, thus making the power of
the 500 V surge transient almost dropping off the scale.
Figure 20. Power Comparison of ESD, EFT, and Surge Transients
In the case of surge transients, their long pulse duration and slowly decreasing pulse power signifies high energy
content.
The electrical energy of a transient that is dumped onto the transceiver’s internal protections cells is converted
into thermal energy, or heat that literally fries the protection cells, thus destroying the transceiver. Figure 21
showcases the large differences in transient energies for single ESD, EFT, and surge transients as well as for an
EFT pulse train, commonly applied during compliance testing.
16 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: SN65HVD82