Datasheet

SN65HVD72
SN65HVD75
SN65HVD78
SLLSE11C –MARCH 2012–REVISED SEPTEMBER 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Table 2. DRIVER FUNCTION TABLE
INPUT ENABLE OUTPUTS
D DE A B
H H H L Actively drive bus High
L H L H Actively drive bus Low
X L Z Z Driver disabled
X OPEN Z Z Driver disabled by default
OPEN H H L Actively drive bus High by default
Table 3. RECEIVER FUNCTION TABLE
DIFFERENTIAL INPUT ENABLE OUTPUT
V
ID
= V
A
– V
B
RE R
V
IT+
< V
ID
L H Receive valid bus High
V
IT–
< V
ID
< V
IT+
L ? Indeterminate bus state
V
ID
< V
IT–
L L Receive valid bus Low
X H Z Receiver disabled
X OPEN Z Receiver disabled by default
Open-circuit bus L H Fail-safe high output
Short-circuit bus L H fail-safe high output
Idle (terminated) bus L H fail-safe high output
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