Datasheet

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ABSOLUTE MAXIMUM RATINGS
PACKAGE DISSIPATION RATINGS
SN65HVD485E
SLLS612C – JUNE 2004 – REVISED MARCH 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
PACKAGE TYPE
T
A
P D
(1)
DGK
(2)
SN65HVD485EP SN65HVD485ED SN65HVD485EDGK
–40 ° C to 85 ° C
Marked as 65HVD485 Marked as VP485 Marked as NWJ
(1) The D package is available taped and reeled. Add an R suffix to the device type (i.e., SN65HVD485EDR).
(2) The DGK package is available taped and reeled. Add an R suffix to the device type (i.e., SN65HVD485EDGKR).
over operating free-air temperature range (unless otherwise noted)
(1) (2)
VALUE UNIT
V
CC
Supply voltage range, -0.5 to 7 V
Voltage range at A or B -9 to 14 V
Voltage range at any logic pin –0.3 to V
CC
+ 0.3 V
Receiver output current –24 to 24 mA
Voltage input range, transient pulse, A and B, through 100 Ω (see Figure 13 ) –50 V to 50 V
Storage temperature range –65 to 130 ° C
T
J
Junction temperature 170 ° C
Continuous total power dissipation Refer to Package Dissipation Table
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
JEDEC BOARD T
A
< 25 ° C DERATING FACTOR
(2)
T
A
= 70 ° C T
A
= 85 ° C
PACKAGE
(1)
MODEL POWER RATING ABOVE T
A
= 25 ° C POWER RATING POWER RATING
Low k
(3)
507 mW 4.82 mW/ ° C 289 mW 217 mW
D
High k
(3)
824 mW 7.85 mW/ ° C 471 mW 353 mW
P Low k
(3)
686 mW 6.53 mW/ ° C 392 mW 294 mW
Low k
(3)
394 mW 3.76 mW/ ° C 255 mW 169 mW
DGK
High k
(4)
583 mW 5.55 mW/ ° C 333 mW 250 mW
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com .
(2) This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.
(3) In accordance with the low-k thermal metric definitions of EIA/JESD51-3.
(4) In accordance with the high-k thermal metric definitions of EIA/JESDS1-7.
2
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