Datasheet
R
D
B
A
Z
Y
7
8
6
5
2
3
DP
(TOP VIEW)
ACKAGE
1
2
3
4
8
7
6
5
R
D
V
CC
B
A
Z
Y
GND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
NC
R
RE
DE
D
GND
GND
V
CC
V
CC
A
B
Z
Y
NC
NC-Nointernalconnection
DP
(TOP VIEW)
ACKAGE
SN65HVD30-EP, SN65HVD31-EP, SN65HVD32-EP
SN65HVD33-EP, SN65HVD34-EP, SN65HVD35-EP
SGLS367D –SEPTEMBER 2006–REVISED MARCH 2012
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
xxx
SN65HVD30, SN65HVD31, SN65HVD32 SN65HVD33, SN65HVD34, SN65HVD35
2 Submit Documentation Feedback Copyright © 2006–2012, Texas Instruments Incorporated
Product Folder Link(s): SN65HVD30-EP SN65HVD31-EP SN65HVD32-EP SN65HVD33-EP SN65HVD34-EP
SN65HVD35-EP