Datasheet
THERMAL CHARACTERISTICS
PARAMETER MEASUREMENT INFORMATION
60 Ω ±1%
V
OD
0or3V
_
+
−7V<V
(test)
<12V
Y
Z
D
375 Ω ±1%
375 Ω ±1%
I
Y
V
OD R
L
0or3V
V
Y
V
Z
I
Z
I
I
V
I
Y
Z
V
OD(RING)
V
OD(RING)
-V
OD(SS)
V
OD(SS)
0VDifferential
SN65HVD179
www.ti.com
.................................................................................................................................................... SLLS668C – FEBRUARY 2006 – REVISED JULY 2008
over operating free-air temperature range unless otherwise noted
(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Low-K board
(3)
, No airflow 230.8
θ
JA
Junction-to-ambient thermal resistance
(2)
° C/W
High-K board
(4)
, No airflow 135.1
θ
JB
Junction-to-board thermal resistance High-K board 44.4 ° C/W
θ
JC
Junction-to-case thermal resistance No board 43.5 ° C/W
R
L
= 60 Ω , C
L
= 50 pF, Input to D a 50% duty 420
P
D
Device power dissipation mW
cycle square wave at indicated signaling rate
Low-K board, No airflow – 40 55
T
A
Ambient air temperature ° C
High-K board, No airflow – 40 85
T
JSD
Thermal shutdown junction temperature 165 ° C
(1) See Application Information section for an explanation of these parameters.
(2) The intent of θ
JA
specification is solely for a thermal performance comparison of one package to another in a standardized environment.
This methodology is not meant to and will not predict the performance of a package in an application-specific environment.
(3) In accordance with the Low-K thermal metric definitions of EIA/JESD51-3.
(4) In accordance with the High-K thermal metric definitions of EIA/JESD51-7.
Figure 1. Driver V
OD
Test Circuit: Voltage and Current Figure 2. Driver V
OD
With Common-Mode Loading Test
Definitions Circuit
VOD(RING) is measured at four points on the output waveform, corresponding to overshoot and undershoot from
theVOD(H) and VOD(L) steady state values.
Figure 3. V
OD(RING)
Waveform and Definitions
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