Datasheet

ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
ELECTROSTATIC DISCHARGE PROTECTION
SN65HVD179
SLLS668C FEBRUARY 2006 REVISED JULY 2008 ....................................................................................................................................................
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
SIGNALING RATE UNIT LOADS BASE PART NUMBER SOIC MARKING
25 Mbps 1/2 SN65HVD179 SN65HVD179
over operating free-air temperature range (unless otherwise noted)
(1) (2)
UNIT
V
CC
Supply voltage range 0.3 V to 6 V
V
A
, V
B
, V
Y
, V
Z
Voltage range at any bus terminal (A, B, Y, Z) 9 V to 14 V
V
TRANS
Voltage input, transient pulse through 100 . See Figure 8 (A, B, Y, Z)
(3)
50 to 50 V
V
I
Voltage input range (D, DE, RE) 0.5 V to 7 V
P
CONT
Continuous total power dissipation Internally limited
(4)
I
O
Output current (receiver output only, R) 11 mA
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
(3) This tests survivability only and the output state of the receiver is not specified.
(4) The Thermal shutdown of this device internally limits the continuous total power dissipation. Thermal shutdown typically occurs when the
junction temperature reaches 165 ° C.
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V
CC
Supply voltage 4.5 5.5
V
V
I
or V
IC
Voltage at any bus terminal (separately or common mode) 7
(1)
12
1/t
UI
Signaling rate 25 Mbps
R
L
Differential load resistance 54 60
V
IH
High-level input voltage D 2 V
CC
V
IL
Low-level input voltage D 0 0.8 V
V
ID
Differential input voltage 12 12
Driver 60
I
OH
High-level output current mA
Receiver 8
Driver 60
I
OL
Low-level output current mA
Receiver 8
T
J
Junction temperature
(2)
40 150 ° C
(1) The algebraic convention, in which the least positive (most negative) limit is designated as minimum is used in this data sheet.
(2) See thermal characteristics table for information regarding this specification.
PARAMETER TEST CONDITIONS MIN TYP
(1)
MAX UNIT
Human body model Bus terminals and GND ± 16
Human body model
(2)
All pins ± 4 kV
Charged-device-model
(3)
All pins ± 1
(1) All typical values at 25 ° C and with a 5-V supply.
(2) Tested in accordance with JEDEC Standard 22, Test Method A114-A.
(3) Tested in accordance with JEDEC Standard 22, Test Method C101.
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